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Enhanced High-Temperature Performance of In-Situ SiN GaN MIS-HEMTs With an AlN Back Barrier Up to 500 °C
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DOI：10.1109/ted.2026.3705410.png)
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Abstract
En 中文
In this work, a novel sandwich-structure GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) device is proposed and fabricated to enhance high-temperature performance. A thick in-situ SiN gate dielectric and an AlN back barrier are employed to confine electrons within the 2DEG channel under high-temperature conditions. The proposed device exhibits excellent characteristics from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$300~^{\circ }$ </tex-math></inline-formula>C to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$500~^{\circ }$ </tex-math></inline-formula>C, with the saturation current decreasing by only 65% at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$500~^{\circ }$ </tex-math></inline-formula>C. This is at the leading level compared with the previously reported devices. After the device is operated at high temperature and rested for 48 h, the related electrical characteristics fully recover without any irreversible degradation. The TCAD simulation results confirm that the proposed structure effectively confines electrons within the 2DEG channel and reduces buffer electron concentration due to the double blocking effects of the SiN and AlN layers. The underlying mechanism of improving high-temperature characteristic is also discussed in detail. These results demonstrate the strong potential of the proposed GaN MIS-HEMT for high-temperature power electronics applications.
Keywords:
AlN back barrier
degradation mechanism
GaN high electron mobility transistor (GaN HEMT)
high temperature
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