Fast Readout for Large Scale Spin-Based Qubits

X. Luo

doi:10.1109/LED.2026.3673832

Fast Readout for Large Scale Spin-Based Qubits

2026-03-17

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DOI：10.1109/LED.2026.3673832

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Abstract

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In this letter, we present fast readout of Pauli spin blockade phenomena and interdot coupling tunability in a silicon double quantum dot (DQD) fabricated using industry-compatible processes. The interdot couplings are tuned with a second self-aligned gate layer. The charge sensing and spin readout are performed by using gate-based reflectometry techniques. The results pave the way for scalable fast readout of large-scale industry-standard manufactured Si spin qubit arrays.

Keywords:

Metal-oxide semiconductor (MOS)

quantum dot (QD)

cryogenic temperature

reflectometry

charge sensing

Pauli spin blockade (PSB)

spin relaxation

quantum information processing (QIP)

Fast Readout for Large Scale Spin-Based Qubits

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