Flexible ITO TFTs with high mobility of 39.1 cm2·V−1·s−1 and excellent uniformity fabricated via mass-production compatible process

2026-03-01

PRE

Zuoxu Yu

Yuzhen Zhang

Tingrui Huang

Wenting Xu

Mingming Liu

Di Gui

Kaizhi Sui

Guangan Yang

Weifeng Sun

Runxiao Shi

Wangran Wu

DOI：10.1088/1674-4926/25060021

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The increasing pursuit of ultra-high resolution displays has driven the demand for thin film transistors (TFTs) with higher mobility, especially on flexible substrates. In this work, we developed indium tin oxide (ITO) TFTs on flexible substrates for the first time and achieved a remarkable average mobility of 39.1 cm2·V−1·s−1, via mass-production compatible processes utilizing SiO2 gate dielectric. Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion (CTE) of our PI substrate, the ITO TFTs exhibit excellent large-scale uniformity. Additionally, the TFTs generate minor variations of −5.5% and +0.45 V in mobility and threshold voltage under a bending radius of 7 mm, respectively. They stay fully functional even after a dynamic bending test up to 13 000 cycles, observing no obvious degradation in mobility and threshold voltage. The reliable mechanical flexibility and robust bending durability demonstrate their great potential for ultra-high resolution flexible displays in the future.

Keywords:

Flexible substrates

Indium tin oxide TFTs

High mobility

Uniformity

Mechanical flexibility

Flexible ITO TFTs with high mobility of 39.1 cm2·V−1·s−1 and excellent uniformity fabricated via mass-production compatible process

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