Gallium oxide in field effect transistors-A perspective

M. Passlack

doi:10.1116/6.0005349

Gallium oxide in field effect transistors-A perspective

2026-05-01

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DOI：10.1116/6.0005349

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Considering growing interest in beta-Ga2O3 channel metal-oxide-semiconductor FET, we revisit Ga2O3 based gate stack innovations, which enabled GaAs based power MOSFET development two decades ago. Fabricated MOSFETs matched ideal model predictions including a subthreshold swing of 60 mV/dec. We reason that the amorphous oxide (Gd5Ga3O12) engineered for Ga2O3 based gate stacks has the potential to be a suitable high-k dielectric for beta-Ga2O3 channel MOSFETs due to its proven compatibility with Ga2O3. The introduction of heterostructures into the MOSFET channel architecture at the time to improve FET reliability could be a conceivable precursor for reliable beta-Ga2O3 MOSFET operation.

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BAND OFFSETS

INTERFACES

PROGRESS

CHANNEL

GROWTH

Gallium oxide in field effect transistors-A perspective

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