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High Power Density Millimeter-Wave Ultra-Thin InGaN Channel DH-HEMTs
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DOI：10.1109/led.2026.3697835.png)
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Abstract
En 中文
This letter presents high-performance millimeter-wave InGaN channel double-heterostructure high-electron-mobility transistors (DH-HEMTs) fabricated using a recess gate oxidation process. The device with a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2~\mu $ </tex-math></inline-formula>m source-drain distance achieves a remarkable breakdown voltage of 76 V. When subjected to off-state high field bias conditions (−8 V, 30 V), the device exhibits a low saturation current collapse ratio of 8.1%. In 30 GHz large-signal power measurements, the device achieves a high saturation power density of 9.6 W/mm at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {DS}}=28$ </tex-math></inline-formula> V and a high power-added efficiency (PAE) of 48.54% at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {DS}}=14$ </tex-math></inline-formula> V. High-temperature stability test of the InGaN channel DH-HEMTs was also evaluated. These results substantiate the significant potential of InGaN channel DH-HEMTs for millimeter-wave applications.
Keywords:
InGaN channel
high electron mobility transistors (HEMTs)
millimeter wave
oxidation
large-signal
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