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Interface Damage Quantification Using an Algebraic Quantum-Transport Model
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DOI：10.1109/ted.2026.3742297.png)
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Abstract
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This study quantifies interface damage in metal–semiconductor devices through a physically defined scattering parameter extracted from standard capacitance–voltage (C–V) and current density–voltage (J–V) measurements. This parameter is obtained from an algebraic quantum-transport model without introducing the phenomenological factors used in conventional thermionic-emission (TE) analysis. Within the combined nonequilibrium Green’s function and Landauer–Büttiker formalism, elastic scattering by interface defects is represented by a complex self-energy in a non-Hermitian effective Hamiltonian. The resulting Lorentzian spectral function enters the energy integral for the current, which cannot be evaluated in an elementary algebraic form. The peak contribution is therefore treated separately, and the low-energy scattering tail is approximated using an asymptotic series based on Watson’s lemma. The resulting algebraic current expression allows the effective interface broadening to be extracted from these electrical measurements and the quantum lifetime to be calculated from that broadening. Applying this model to proton-irradiated 4H-SiC Schottky barrier diodes (SBDs) reveals that this broadening increases to a range of 0.43–5.93 meV after irradiation. Furthermore, analysis of the device perimeter-to-area ratio reveals a geometric scaling behavior in which smaller devices exhibit a shortened elastic mean free path due to the accumulation of peripheral defects. Using standard electrical measurements, this approach enables rapid, cost-effective screening of interface damage.
Keywords:
4H-SiC Schottky barrier diode (SBD)
asymptotic series
interface scattering
non-Hermitian Hamiltonian
proton irradiation
quantum transport
Journal
IF:
3.2
Papers:
792
Citations:
3.7W
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