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Interface-engineered reliable HfO2-based RRAM for synaptic simulation
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DOI：10.1039/c9tc04880d.png)
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Abstract
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Future synaptic simulation using resistance random access memory (RRAM) requires higher reliability and lower power consumption of the devices and understanding of the correlation of the materials with their multi-level resistance switching (RS) properties. Using O-3 pretreatment on a TiN electrode, this work highlights the significant role of the interface in the enhancement of the reliability and the power consumption of HfO2-based RRAM devices. X-ray photoelectron spectroscopy investigations indicate increases of the TiON and TiO2 components with the augmentation of the number of O-3 treatment cycles, which strongly impacts the RS properties of the Pt/HfO2/TiN devices. Optimal RS properties were obtained for 20 O-3 pulse-pretreated devices, which were used to emulate biological synapses after an annealing process. Analog memory properties, including analog set and reset in DC mode and potentiation/depression based on two types of designed pulses, have been achieved. Finally, one of the biological synapse learning rules, spike-timing-dependent plasticity, was successfully emulated. These results, avoiding the conventional route based on dual-layer insulators, are of significance for synaptic simulation using interface-engineered single-layer HfO2 RRAM and further reveal the internal mechanism of HfO2-based electron synapses.
Keywords:
ELECTRODES
MEMRISTOR
TI
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