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Investigation on the Degradation and Failure Mode of Trench SiC MOSFETs Under Repetitive UIS Stresses
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DOI：10.1109/ted.2026.3704032.png)
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Abstract
En 中文
The variations in key electrical parameters of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) with asymmetric trench (AT) and double-trench (DT) structure are studied in this article. The degradation and failure mechanism under different repetitive unclamped-inductive-switching (UIS) stress is also experimentally analyzed and compared. Two distinct degradation modes of SiC MOSFETs are identified and the physical mechanisms of the degradation are analyzed in detail. The results indicate that the primary degradation and failure mechanisms in DT-MOSFETs are dominated by electric field stress, whereas those in AT-MOSFETs are mainly driven by thermal stress.
Keywords:
Hot hole injection
repetitive unclamped-inductive-switching (UIS) stress
thermal fatigue
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3.2
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685
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3.7W
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