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Modeling of Polarization Dynamics in HfO<sub>2</sub>-Based Ferroelectrics by Reduced <italic>L-K</italic> Model
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J
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J
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R
刘
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DOI：10.1109/led.2026.3697987.png)
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Abstract
En 中文
A multi-domain reduced <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L-K</i> model based on the physical fundamentals has been developed to mimic the dynamic behaviors of the HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based ferroelectric (FE) devices. Based on the model, the calculated polarization-voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P-V</i>) curves coincide well with the experimental data from the fabricated metal-FE oxide-metal (MFM) samples with different Hf<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}_{\mathbf {0.5}}$ </tex-math></inline-formula>Zr<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}_{\mathbf {0.5}}$ </tex-math></inline-formula>O<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}_{\mathbf {2}}$ </tex-math></inline-formula> (HZO) annealing temperature, showing excellent consistency. The readout waveform of the ferroelectric random-access memory (FRAM) is predicted using this model. In addition, this model was used to simulate the negative capacitance effect in the 1FE-Capacitor 1 resistor cell, demonstrating the reduced <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L-K</i> model is an efficient tool for ferroelectric circuit design and devices optimization.
Keywords:
Domain
HZO ferroelectrics
reduced L-K model
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614
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