Modeling working memory: An interference model of complex span

doi:10.3758/s13423-012-0272-4

Modeling working memory: An interference model of complex span

2012-06-20

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DOI：10.3758/s13423-012-0272-4

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This article introduces a new computational model for the complex-span task, the most popular task for studying working memory. SOB-CS is a two-layer neural network that associates distributed item representations with distributed, overlapping position markers. Memory capacity limits are explained by interference from a superposition of associations. Concurrent processing interferes with memory through involuntary encoding of distractors. Free time in-between distractors is used to remove irrelevant representations, thereby reducing interference. The model accounts for benchmark findings in four areas: (1) effects of processing pace, processing difficulty, and number of processing steps; (2) effects of serial position and error patterns; (3) effects of different kinds of item-distractor similarity; and (4) correlations between span tasks. The model makes several new predictions in these areas, which were confirmed experimentally.

Keywords:

Working memory

Computational modeling

Modeling working memory: An interference model of complex span

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