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MRAM makes its mark
DOI:10.1038/s41928-022-00893-w.png)
Abstract
En 中文
A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lower the power consumption of data storage and management.
Journal
IF:
40.9
Papers:
1.7K
Citations:
2.1W
Organization
Cited Papers
Review of Semiconductor Flash Memory Devices for Material and Process Issues
ADVANCED MATERIALS
IF26.8
Opportunities and challenges for spintronics in the microelectronics industry
NATURE ELECTRONICS
IF40.9
One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
SCIENTIFIC REPORTS
IF3.9

