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Nonfilamentary Switching With Trap-Controlled Capacitive Charge Modulation in GaO<sub>x</sub>/HfO<sub>x</sub> Heterostructures on Flexible Substrate
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DOI：10.1109/ted.2026.3708423.png)
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Abstract
En 中文
Here, we report sweep-rate driven, nonfilamentary switching in GaO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>/HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> bilayer heterostructures on flexible substrate, exhibiting memristive behavior with trap-controlled capacitive charge modulation. The devices exhibit smooth, clockwise, nonpinched butterfly-type <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I$ </tex-math></inline-formula>–<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula> hysteresis with nanoampere-level current operation and clear device area scalability, signifying a spatially distributed transport mechanism. The presence of finite zero-bias current, pronounced sweep-rate dependence, and frequency-dependent capacitance–voltage characteristics reveal strong interfacial charge accumulation at the GaO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>/HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> interface. Temperature-dependent measurements combined with Poole–Frenkel (PF) analysis in both resistance states indicate thermally activated, field-assisted emission from oxygen-vacancy-related trap states as the dominant conduction mechanism. The coupling between trap-mediated transport and interfacial charge accumulation enables gradual and reversible conductance modulation without filament formation, suppressing localized Joule heating and enhancing cycle-to-cycle uniformity. Stable analog programmability under pulse training and endurance over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{\mathbf {{3}}}$ </tex-math></inline-formula> cycles demonstrates the robustness of the distributed switching pathway. This work establishes a trap-controlled, interfacial charge-driven switching mechanism in flexible GaO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>/HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> heterostructures, enabling nonfilamentary operation with capacitive-assisted conductance modulation and highlighting its potential for low-power, flexible analog in-memory and neuromorphic computing applications.
Keywords:
Capacitive charge modulation
flexible electronics
GaOx/HfOx heterostructures
memristive
neuromorphic computing
nonfilamentary switching
trap-assisted transport
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3.2
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685
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3.7W
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