.png){kind=icon}
Return
Phase Change Memory
.png){kind=icon}
PRE
AI
DOI：10.1109/JPROC.2010.2070050.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.
Keywords:
Chalcogenides
emerging memory
heat conduction
nonvolatile memory
PCRAM
phase change material
phase change memory (PCM)
PRAM
thermal physics
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
25.9
Papers:
9.9K
Citations:
4.5W
Organization
View more organizations
Cited Papers
Solution-phase deposition and nanopatterning of GeSbSe phase-change materials.png)
NATURE MATERIALS
NATURE MATERIALSIF38.5
PREAI
ShareSaveShareSave View more