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Realizing high-performance, enhanced write endurance of low-RA STT-MRAM through MgO tunnel barrier engineering
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DOI：10.1088/1674-4926/25080016.png)
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Abstract
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Spin-transfer-torque magnetic random-access memory (STT-MRAM), based on magnetic tunnel junctions (MTJs), is attracting significant attention for applications demanding high reliability and speed. To ensure high TMR which is essential for achieving sufficient sense margin, MTJs typically incorporate relatively thick tunnel barriers, resulting in high operating voltages. As the CMOS technology nodes advance and operating voltages decrease, reducing the MTJ switching voltage becomes imperative. However, MTJs with thinner tunnel barriers generally exhibit significantly degraded read margins and bit error rate, presenting a major challenge for achieving high-density, low-power MRAM. Here, we address this challenge through MgO tunnel barrier engineering and process optimization, successfully reducing the required MOS driving voltage while simultaneously expanding the write margin. Meanwhile, 85% array yield with sub-parts-per-million bit error rates at RA = 7 Omega & centerdot;mu m2 is achieved. These advancements are promising for developing high-density MRAM at advanced technology nodes.
Keywords:
STT-MRAM
magnetic tunnel junction
RA scaling
perpendicular magnetic anisotropy
MgO tunnel barrier
switching voltage
endurance performance
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5.3
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