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SiC-based high electron mobility transistor
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DOI：10.1063/5.0202925.png)
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Abstract
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This paper describes the fabrication of a SiC-based high electron mobility transistor (HEMT). A single-crystal 3C-SiC layer was grown on a C-face 4H-SiC substrate, and 2D electron gas was induced at the 3C-SiC/4H-SiC heterointerface due to the unique polarization physics. The measured Hall mobility of the 2DEG was 586 cm(2)/V s at room temperature. Source, gate, and drain electrodes were fabricated on the 3C-SiC surface. The drain current for the fabricated SiC-HEMT was measured to be 47.5 mA/mm, and the transconductance was estimated to be 13.5 mS/mm.
Keywords:
THERMAL-EXPANSION
HETEROSTRUCTURES
POLARIZATION
GASES
Journal
IF:
3.6
Papers:
10.4W
Citations:
17.8W
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