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Transport mechanism of oxide-based programmable diode
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DOI：10.1088/1674-4926/25090006.png)
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Abstract
En 中文
In this work, the oxide-based programmable diodes (PDs) with structure of TiN/HfO2/Si/Al are fabricated, and its electron transport mechanisms are investigated. Electrical measurements results depicted that the conduction and rectification performance of oxide-based PDs are mainly controlled by the interface between oxygen vacancies (VOs) consisted filament and semiconductor electrode. The local density of state in filament and band-bending of the PDs are calculated by first-principal simulation. The electron transport in oxide PDs is dominated by Poole−Frenkel emission under forward bias, while under negative bias, the PDs behave like a reverse Schottky-diode. These mechanisms research is necessary for device optimization and circuit design of oxide-based PDs.
Keywords:
oxide-based programmable diode
electron transport mechanism
oxygen vacancies
Poole−Frenkel emission
Schottky-diode behavior
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