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Understanding Field-Cycling-Dependent Evolution of Polarization Dynamics in Nonvolatile Anti-Ferroelectric Hf<sub>x</sub>Zr<sub>1–x</sub>O<sub>2</sub> Capacitors
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DOI：10.1109/ted.2026.3708108.png)
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Abstract
En 中文
In this work, the polarization dynamics of nonvolatile anti-ferroelectric (AFE) Hf<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub>Zr<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1–x</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) capacitor under cycling stress were investigated. The nucleation-limited switching (NLS) model reveals that the field-cycling-induced modification of nucleation activation energy results in a reduction in positive and an increase in negative average switching time. Concurrently, the switching in both directions is observed to become more uniform. Based on the comparison with the volatile AFE HZO capacitor and experiments under varying cycling conditions, it is suggested that the cycling stress in the nonvolatile AFE HZO capacitor could promote charge injection. Consequently, the built-in electric field could drive these injected charges into the HZO film, leading to a depinning effect. The results in this study could lay the foundation for the application of nonvolatile AFE HZO memories.
Keywords:
Anti-ferroelectric (AFE)
HfxZr1–xO2 (HZO)
nonvolatile
nucleation-limited switching (NLS) model
switching dynamics
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3.2
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