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Vertical GaN Schottky Barrier Diodes With Polarized P-InGaN/P-GaN Heterojunction Termination Extension Structure
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DOI：10.1109/led.2026.3697516.png)
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Abstract
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In this work, a novel vertical GaN Schottky barrier diode (SBD) with a p-InGaN/p-GaN polarized heterojunction (PolHJ) as junction termination extension (JTE) structure has been proposed and demonstrated. The design concept is based on the PolHJ that polarization charges generated at the p-InGaN/p-GaN heterointerface could enable the extension of the depletion region and therefore optimize the edge electric field distribution at the p-n junction under reverse bias, which would be able to greatly improve the electric field crowding, limited breakdown voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BV</i>), and high reverse leakage current commonly observed in GaN SBDs. Experimental results show that superior performance of PolHJ-JTE vertical GaN SBDs, outperforming the referenced GaN SBDs, have been obtained. More specifically, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BV</i> of the PolHJ-JTE vertical GaN SBDs has been enhanced by 203 V (133%) and 147 V (70%), respectively, compared with the GaN SBDs without JTE and with a single-layer p-GaN JTE structure, which is consistent with the simulation results. The significantly improved breakdown characteristic of the GaN SBDs is attributed to the outstanding edge electric field suppression by the polarized p-InGaN/p-GaN heterojunction, as evidenced by simulation results. This work provides a new approach for the development of high-performance vertical GaN SBDs, and is also helpful for design of future devices, which can be beneficially exploited from polarized III-nitride heterojunctions.
Keywords:
GaN
vertical Schottky barrier diodes (SBDs)
p-InGaN/p-GaN
PolHJ
junction termination
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