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Japanese Journal of Applied Physics

IF1.8
Papers422
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Journal Papers 422
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Dielectric thin films for future electron devices: science and technology 2025
deleteJapanese Journal of Applied Physics
IF1.8
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Single flow-focusing device with downstream constriction narrowed by water sheath flow for bacterial-sized liposomes
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IF1.8
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deleteYang, Dibo; Kusuda, Yuka; Ishida, Tadashi
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Development of a thin-film residual-stress measurement device using multi-folded structures
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deleteAshikari, Yuki; Takase, Shun; Yamama, Ryoya; Oka, Chiemi; Hata, Seiichi
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Thickness dependence below 10 nm on the ferroelectric HfN1.15 thin film formation by ECR-plasma sputtering
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deleteLi, Kangbai; Ohmi, Shun-Ichiro
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The algorithm of insulated gated bipolar transistor (IGBT) associated with the characteristic curves in the region of gate bias slightly above the internal threshold voltage
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deleteYang, Hsin-Chia; Chi, Sung-Ching; Yang, Pei-Jun
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Analysis of read voltage dependency of discrete shift and spike RTN in 40 nm TaOX-based ReRAM for CiM applications through a fine-grained extraction method
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deleteAbarra, E. Yushi; Misawa, Naoko; Matsui, Chihiro; Takeuchi, Ken
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High-power single-mode slow-light VCSEL array for compact LiDAR applications
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deleteHassan, Ahmed; Gu, Xiaodong; Koyama, Fumio
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Microscale thermal propagation characteristics and intermetallic compound formation in Al/Ni multilayer powders during quasi-static heating processes
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deleteYamashita, Souto; Ito, Kosuke; Miyake, Shugo
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Characterization of plasma-induced damage on TiN/HfO2/SiO2 stacked structure during multi-Vt process for advanced CMOS using different dry etching gas chemistry
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deleteHirabayashi, Hidefumi; Sato, Kiyohiko; Kofuji, Naoyuki; Sakai, Satoshi; Matsui, Miyako; Kasai, Taiga; Miura, Makoto
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First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface( vol 65, 03SP18 , 2026)
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deleteKageshima, Hiroyuki; Seo, Insung; Akiyama, Toru; Shiraishi, Kenji
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TCAD analysis on defect-induced degradation of electrical and retention characteristics in 3D DRAM
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deleteFatima, Bushra; Manhas, Sanjeev Kumar; Khan, Imtiyaz Ahmad; Raju, Harsh; Kumar, Arvind
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Mitigation of hybrid mode responses by increasing SAW velocity difference in TC SAW resonators
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deleteWang, Qiuhao; Yang, Zijiang; Wu, Ting; Cai, Wanli; Bao, Jingfu; Hashimoto, Ken-ya
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High-frequency bulk acoustic wave resonators with thickness shear and extensional modes in LiNbO3 thin plates with acoustic multilayers
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deleteKadota, Michio; Yamashita, Fuyuko; Tanaka, Shuji
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Neutron generation with pyroelectric crystal heated by laser light
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deleteAbo, Satoshi; Oue, Fuma; Masuzawa, Tomoaki; Mimura, Hidenori; Wakaya, Fujio
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Feasibility verification of multiple defects imaging using phase information of Lamb waves generated by high-intensity airborne ultrasound
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deleteIshikawa, Chikao; Shimizu, Kyosuke; Ito, Youichi; Osumi, Ayumu
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Area and polarity-dependent switching in AlScN ferroelectric capacitors
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deleteNishida, Hirofumi; Chen, Si-Meng; Hoshii, Takuya; Tsutsui, Kazuo; Wakabayashi, Hitoshi; Kakushima, Kuniyuki
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Fabrication of a sharp molybdenum tip by combining electrostatic-stress-driven pull-up growth and build-up process
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deleteNishimura, Takashi; Matsumoto, Nobu
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Machine learning approach for non-destructive characterization of embedded nano-structure in Si MOSFET
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deleteLyu, Renxiang; Yamaguchi, Hyoto; Kasai, Seiya
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Recent progress in band gap engineering of two-dimensional silicon nanosheets through controlled structure and chemistry
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deleteEssner, Jeremy B.; Jabrayilov, Maharram; Panthani, Matthew G.
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Effect of component of cinnamic acid-stabilized ZrO2 nanoparticle resists on resist performance for EB and EUV lithography
deleteJapanese Journal of Applied Physics
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deleteHamada, Takashi; Shimoda, Shuhei; Yamamoto, Hiroki
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