Modeling and simulation of short-channel MOSFETs operating in deep weak inversion
Vann, JM; Smith, MC; Simpson, ML; Thomas, CE; Paulus, MJ; Moore, JA; Baylor, LR; Rochelle, JM; Lowndes, DW; Geohegan, DB; Jellison, GE; Merkulov, VI; Puretzky, AA; Voelkl, E
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