Unveiling the Roles of Bulk and Interface Defects of a High-K Dielectric TiO2-Based Charge-Trapping Layer in the Device Failure of Non-Volatile Charge-Trapping Memory
Xia, Zhaoqing; He, Yukai; Lv, Lin; Niu, Huan; Zheng, Zebin; Liu, Xiaoshan; Dong, Wenjing; Wang, Xunying; Wan, Houzhao; Ma, Guokun; Wang, Hao
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