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Solid-State Electronics
IF
1.4
Papers
94
Citations
6331
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Journal Papers
94
Related Insights
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Journal Papers
94
Publication Date
Publication Date
IF
Citations
Fabrication and characterization of MnxZn(1-x)Ob (x=0.02, 0.04, 0.06, 0.08 & 0.10) as a buffer layer for CZTS thin film solar cells
Solid-State Electronics
IF
1.4
2026-03-01
0
PRE
AI
Abdullah, Huda; Abidin, Muhammad Syazwan Akmal Zainal; Xian, Kang Jian; Naim, Norshafadzila Mohammad; Mustaza, Seri Mastura; Mohmad, Abdul Rahman; Mohammad, Masita; Othman, Mohd Hafiz Dzarfan; Septiani, Ni Luh Wulan; Fen, Yap Wing; Rizwan, Muhammad
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Improving the analog switching behavior in HfO2-based RRAM with simple 1T1R structure configuration
Solid-State Electronics
IF
1.4
2026-02-01
0
PRE
AI
Xia, Jian; He, Huikai; Shen, Dingyi; Jiang, Xiangyang; Yang, Juntao
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Unified approach for considering the effect of doping and device temperature on the band structure and electrostatics of UTB SOI DG MOS devices
Solid-State Electronics
IF
1.4
2026-02-01
0
PRE
AI
Dhote, Yogesh; Mishra, Nalin Vilochan; Medury, Aditya Sankar
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Numerical analysis of defects passivation for tungsten-doped indium oxide thin film transistors by using hydrogen peroxide as cosolvent in a supercritical fluid system
Solid-State Electronics
IF
1.4
2026-02-01
0
PRE
AI
Tang, Zeqiu; Gan, Kai-Jhih; Chang-Liao, Kuei-Shu; Zhao, Zefu; Xiang, Jialong; Zhang, Bojun; Chin, Chih-Cheng; Cheng, Yi-Hsuan; Yu, Cheng-Chang; Huang, Po-Chung; Fang, Chao-Yi; Ruan, Dun-Bao
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Assessment of dual-oxide options for LDMOS transistors in FinFET technology
Solid-State Electronics
IF
1.4
2026-02-01
0
OA
AI
Ruggieri, Alessandro; Tondelli, Lisa; Selmi, Luca
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A probabilistic compact model of ReRAM memories for accurate and high-performance simulation
Solid-State Electronics
IF
1.4
2026-02-01
0
PRE
AI
Guitarra, S.; Gavilanez, M.; Cevallos, J.; Velez, A.
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Unveiling the output conductance dynamics in Nanosheet FET: Does cryogenic temperature Make a Difference?
Solid-State Electronics
IF
1.4
2026-02-01
0
PRE
AI
Malvika; Singh, Prabhat; Bagga, Navjeet; Shakir, Mohd.; Dixit, Ankit; Kumar, Naveen; Georgiev, Vihar; Dasgupta, S.
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Investigation of cap layer effects on low-contact-resistance vanadium-based Au-free low-temperature ohmic contacts for AlGaN/GaN HEMT
Solid-State Electronics
IF
1.4
2026-02-01
0
PRE
AI
Xie, Zijing; Ma, Xiao; Li, Xinghuan; Tang, Jun; Wang, Hong
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Ag-Cu2O nano composite: A comprehensive study on Ag concentration effect on physical properties for a two-band laser detector
Solid-State Electronics
IF
1.4
2026-01-01
1
PRE
AI
Salim, Evan T.; Mahdi, Rana O.; Abbas, Roaa A.; Salim, Zaid T.; Gopinath, Subash C. B.; Al-Amiery, Ahmed A.
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Difference in kinetics between thermal nitridation and radical nitridation processes of 4H-SiC surface considering simultaneous N-incorporation and N-desorption reactions
Solid-State Electronics
IF
1.4
2026-01-01
0
PRE
AI
Yoshida, Haruki; Onaya, Takashi; Tamura, Atsushi; Kita, Koji
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1T-DRAM with retrograde doping (vol 232, 109315, 2026)
Solid-State Electronics
IF
1.4
2026-01-01
0
PRE
AI
Ulla, Maki; Bashir, M. D. Yasir; Siddiqui, Mohammad Jawaid
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Bonding of micro LEDs using wet reflow process of indium bumps based on SU-8 solder mask
Solid-State Electronics
IF
1.4
2026-01-01
0
OA
AI
Bai, Shuangjia; Lang, Taifu; Lin, Xin; Wang, Shuaishuai; Wang, Zhihua; Lin, Chang; Yan, Qun; Sun, Jie
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Application of forksheet transistor in operational transconductance amplifier
Solid-State Electronics
IF
1.4
2026-01-01
0
PRE
AI
Martino, Joao Antonio; de Paula, Julius Andretti Peixoto Pires; Agopian, Paula Ghedini Der; Ritzenthaler, Romain; Mertens, Hans; Veloso, Anabela; Horiguchi, Naoto
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Impact of top electrode materials on resistive switching characteristics of TiOx-based MIM structures
Solid-State Electronics
IF
1.4
2026-01-01
0
PRE
AI
Islam, Karimul; Sultana, Rezwana; Dziegielewska, Aleksandra; Mroczynski, Robert
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Exploring low-k/high-k multilayers as high breakdown strength dielectrics for capacitors
Solid-State Electronics
IF
1.4
2026-01-01
0
OA
AI
Chaussard, Julie; Guerin, Chloe; Lefevre, Aude; Gonon, Patrice; Jousseaume, Vincent
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Short-term charge trapping effects in ferroelectric FETs: impact of pulse amplitude and timing
Solid-State Electronics
IF
1.4
2026-01-01
0
PRE
AI
Kleimaier, Dominik; Dunkel, Stefan; Mulaosmanovic, Halid; Muller, Johannes; Beyer, Sven; Havel, Viktor; Mikolajick, Thomas
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Warm white electrical sensitivities of pentacene-based Schottky photodiode
Solid-State Electronics
IF
1.4
2026-01-01
0
PRE
AI
Ali, Ghusoon M.; Hussain, Kahtan Adnan; Armoot, Shahad T.
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Radio-frequency variability of GAA Si NS CFETs induced by PVE and IPF simultaneously
Solid-State Electronics
IF
1.4
2026-01-01
0
OA
AI
Kola, Sekhar Reddy; Chuang, Min-Hui; Li, Yiming
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A 10T2R non-volatile SRAM cell design with high-reliability
Solid-State Electronics
IF
1.4
2025-12-01
0
PRE
AI
Kwon, So-Yeon; Ko, Woon-San; Byun, Jun-Ho; Lee, Do-Yeon; Park, So-Yeong; Hong, Hye-Ri; Lee, Ga-Won
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Colossal permittivity and defect-engineered conduction in Ag/Al/SiO2/Si/ Ag MIS structures for next-generation RRAM and 5G/6G capacitors
Solid-State Electronics
IF
1.4
2025-12-01
1
PRE
AI
Ashery, A.
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