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Semiconductor Science and Technology cover

Semiconductor Science and Technology

IF2.1
Papers231
Citations8603
Journal Papers 231
Publication Date
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Recent advances in diamond-gallium oxide heterojunction photodetectors: a review of emerging technologies
deleteSemiconductor Science and Technology
IF2.1
delete2026-05-01
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deleteLi, Xiaoyan; Jiang, Nan; Wang, Fangjun; Wei, Xianquan; Hu, Wei
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Monolithically integrated GaN hysteresis comparator based on complementary logic
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IF2.1
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deleteMa, Shaoyan; Jiang, Qimeng; Huang, Sen; Yang, Yang; Zhang, Xuanming; Liu, Jianfei; Wang, Xinhua; Wei, Ke; Gao, Xinguo; Cen, Lizhao; Liu, Wen; Liu, Xinyu
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Investigation of mechanical properties and dislocation glide in homoepitaxial and heteroepitaxial Mg-doped GaN
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IF2.1
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deleteShu, Zhengdong; Wu, Wenxuan; Wang, Xiaodan; Xu, Da; Ke, Lei; Zeng, Xionghui; Xu, Ke
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Ultra-low on-state voltage and saturation current carrier stored trench bipolar transistor with orthogonal 3D arranged dual-trench
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IF2.1
delete2026-05-01
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deleteZhang, Jinping; Feng, Yunlong; Deng, Haonan; Zhu, Rongrong; Zhang, Bo
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A novel 1.2 kV GaN trench MOSFET with reduced saturation current
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IF2.1
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deleteJamal, Rashid; Gupta, Partha Sarathi; Rahaman, Hafizur
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Design and investigation of a label-free biosensor based on GaSb-source dual-material gate heterojunction tunneling field-effect transistor
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IF2.1
delete2026-05-01
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deleteHe, Xiaoqiang; Xie, Haiwu; Dong, Feng
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Preparation and properties of Cu2O\Al2O3\ZnSnN2 heterojunctions
deleteSemiconductor Science and Technology
IF2.1
delete2026-05-01
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deleteCai, Xing-Min; Liang, Jian-Lin; Xiong, Wan-Fang; Xie, Yi-Zhu; Zhang, Dong-Ping; Wang, Fan; Li, Jian-Wei; Ye, Fan
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Performance trade-off and optimization strategies for capacitance, DCR and PDP in SPAD devices
deleteSemiconductor Science and Technology
IF2.1
delete2026-05-01
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deleteLiu, Junliang; Liu, Wangyang; Wang, Chunwang; Zhang, Zekai
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Influence of aluminium incorporation on the semiconducting properties of p-type tin monoxide
deleteSemiconductor Science and Technology
IF2.1
delete2026-05-01
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deletePeek, Benjamin J.; Werner, Matthew; Niang, Kham; Chen, Xiao; Flewitt, Andrew J.; Clark, Oliver W. S.; Goodall, Joe C.; Johnson, Andrew L.; Das, Satyajit; Alkhalil, Feras; Williams, Paul A.; Chalker, Paul R.
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Electro-thermal analysis of device geometry dependence on the amorphous cap size in phase change memory devices
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IF2.1
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deleteMishra, Amiya Kumar; Pandey, Shivendra Kumar
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Impact of miscut angles on mechanical properties and surface damage of (100) β-Ga2O3
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IF2.1
delete2026-05-01
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deleteBi, Yuefei; Jin, Zhu; Wu, Defan; Bao, Chenchen; Liu, Yingying; Li, Cheng; Xia, Ning; Zhu, Qi; Zhang, Hui; Yang, Deren
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Metallisation-associated degradation of silicon coated with thin dielectric layers
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IF2.1
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deleteKhorani, Edris; Pain, Sophie L.; Yadav, Anup; Hall, Kelsey J.; Niewelt, Tim; Grant, Nicholas E.; Murphy, John D.
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Review on fabrication and applications of GaN nanorods
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IF2.1
delete2026-05-01
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deleteWei, Dushuai; Zhang, Boen; Zhang, Shiying; Yang, Boyuan; Sun, Defu; Yu, Huidong; Jiang, Kaize; Wang, Benfa; Wu, Yuzhu; Li, Qiubo; Wang, Lihuan; Zhang, Lei; Wang, Guodong; Wang, Shouzhi; Zhang, Yu; Xu, Qingjun
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A numerical simulation of thermal field optimization and stress distribution in β-Ga2O3 single crystals grown by the vertical Bridgman method
deleteSemiconductor Science and Technology
IF2.1
delete2026-05-01
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deleteMeng, Biao; Zhai, Xiaolin; Wang, Minrui; Zhou, Shun; Hu, Zhihao; Wang, Xiangjin; Zhang, Zhaofu
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Electrical characterization of high-k (k > 115) crystalline SrTiO3 (STO) thin film integration with GaN with nanomembrane transfer process
deleteSemiconductor Science and Technology
IF2.1
delete2026-05-01
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deleteAlam, Md Tahmidul; Lee, Kyoungjun; Wang, Guangying; Eom, Chang-beom; Gupta, Chirag
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Effective mobility in N-MOSFET: comparison of McLarty and split C-V methods, and the mobility degradation factors effects
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IF2.1
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deleteMasson, P.; Kubica, R. M. R.; Dahbi, S.; Bousmaha-Jouve, R.; Amouroux, J.; Dura, J.; Julien, F.; Misra, V
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High ultraviolet stability red phosphorescent organic light-emitting diode based on fluorinated copper phthalocyanine interface modification
deleteSemiconductor Science and Technology
IF2.1
delete2026-05-01
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deleteZhang, Yixiao; Zhou, Lulu; Zhou, Qi; Liu, Shulei; Wan, Quanpeng; Ye, Zhonghua; Li, Jiao; Shi, Wei; Wei, Bin
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Explicit lattice parameter determination and Raman study of GeSn-epilayers on Ge/Gd2O3/Si(111) substrates
deleteSemiconductor Science and Technology
IF2.1
delete2026-05-01
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deleteTharundev, V. V.; Singh, Dushyant; Vigneshwari, S. R.; Maity, Subha; Khiangte, Krista R.
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Efficacy of π-gate in LDMOS for improved safe operating area and figure of merits
deleteSemiconductor Science and Technology
IF2.1
delete2026-05-01
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deleteHussain, Md Sheeraz; Sirohi, Ankit; Lahgere, Avinash; Chauhan, Yogesh Singh; Akram, Md Waseem
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Modulation of optoelectronic performance in MoTe2/MoS2 heterojunction via strain engineering
deleteSemiconductor Science and Technology
IF2.1
delete2026-05-01
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deleteLi, Yike; Wang, Jiaju; Wang, Yunfei; Gao, Yuan; Nan, Haiyan; Bing, Dan
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