Normally-Off Top-Gate Self-Aligned Field-Effect Transistor Including Crystal InOx Formed by Hydrogen Gas-Free Sputtering With Channel Length of 3 μm and High Field-Effect Mobility Over 75 cm2/Vs Fabricated through 400°C Process
Shima, Yukinori; Kurosaki, Daisuke; Jincho, Masami; Mashiyama, Mitsuo; Watanabe, Masahiro; Kumakura, Kayo; Yasumoto, Seiji; Dobashi, Masayoshi; Koezuka, Junichi; Saito, Motoharu; Kusunoki, Koji; Yamazaki, Shunpei.png)
Share.png)
Save Boosting the Efficiencies of OLEDs Through ViP TechnologyCai, Minghan; Li, Zhenzhen; Li, Guomeng; Xia, Zengqiang; Zu, Zhao; Li, Hui; Zhao, Wenyan; Zhang, Haohan; Qu, Cheng; Zhang, Yuewei; Zhang, Dongdong; Ha, Mihwa; Song, Wonjun; Huang, Genmao; Duan, Lian; Shen, Ying; Lee, C. c.; Zhang, Deqiang Share Save 8.3-in. 1058 ppi Crystal Indium Oxide Display With Side-by-Side Method Using Fine Metal Mask and Partition Wall Dividing OLED in SubpixelsEguchi, Shingo; Aoyama, Tomoya; Kato, Sho; Oide, Takayuki; Inoue, Seiko; Yamagata, Sachiko; Kubota, Daisuke; Kusunoki, Koji; Idojiri, Satoru; Nakazawa, Yasutaka; Sato, Rai; Yamazaki, Shunpei Share Save Liquid Crystal Beam Control TechnologyWang, Feifei; Liang, Yue; Liu, Ziqi; Feng, Liping; Ma, Xinli; Jiang, Ni; Zhang, Ruichen; Wang, Kaixuan; Zuo, Xiongcan; Chen, Xi; Feng, Bin; Shao, Xibin Share Save 
.png){kind=icon}
Not logged in.png){kind=icon}
.png){kind=icon}
.png){kind=icon}
