Normally-Off Top-Gate Self-Aligned Field-Effect Transistor Including Crystal InOx Formed by Hydrogen Gas-Free Sputtering With Channel Length of 3 μm and High Field-Effect Mobility Over 75 cm2/Vs Fabricated through 400°C Process
Shima, Yukinori; Kurosaki, Daisuke; Jincho, Masami; Mashiyama, Mitsuo; Watanabe, Masahiro; Kumakura, Kayo; Yasumoto, Seiji; Dobashi, Masayoshi; Koezuka, Junichi; Saito, Motoharu; Kusunoki, Koji; Yamazaki, Shunpei.png)
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Save Boosting the Efficiencies of OLEDs Through ViP TechnologyCai, Minghan; Li, Zhenzhen; Li, Guomeng; Xia, Zengqiang; Zu, Zhao; Li, Hui; Zhao, Wenyan; Zhang, Haohan; Qu, Cheng; Zhang, Yuewei; Zhang, Dongdong; Ha, Mihwa; Song, Wonjun; Huang, Genmao; Duan, Lian; Shen, Ying; Lee, C. c.; Zhang, Deqiang Share Save 8.3-in. 1058 ppi Crystal Indium Oxide Display With Side-by-Side Method Using Fine Metal Mask and Partition Wall Dividing OLED in SubpixelsEguchi, Shingo; Aoyama, Tomoya; Kato, Sho; Oide, Takayuki; Inoue, Seiko; Yamagata, Sachiko; Kubota, Daisuke; Kusunoki, Koji; Idojiri, Satoru; Nakazawa, Yasutaka; Sato, Rai; Yamazaki, Shunpei Share Save High-Frame-Rate Display Using Short-Channel-Length Crystal IO FET on BackplaneKusunoki, Koji; Saito, Motoharu; Kawashima, Susumu; Nakada, Masataka; Tamura, Shiori; Jincho, Masami; Nakazawa, Yasutaka; Kokubo, Ryu; Ikada, Kaori; Ogawa, Tomohiro; Koezuka, Junichi; Okazaki, Kenichi; Seo, Norihiko; Yamazaki, Shunpei Share Save 
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