Not logged inHigh-frequency and high-power AlGaN/GaN MOSHEMTs fabricated using atomic layer etching for gate recess
Huang, Hsuan-Yao; Yang, Tsung-Ying; Liu, Cheng-Xiang; Chang, Kuan-Pang; Weng, You-Chen; Wu, Jui-Sheng; Huang, Cheng-Jun; Chiu, Chung-Han; Lin, You-Ting; Dee, Chang-Fu; Lin, Chun-Hsiung; Chang, Edward Yi .png)
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SaveShare Save Share Save Share Save Share Save Share Save Share Save Share Save Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous IntegrationHsu, Lung-Hsing; Lai, Yung-Yu; Tu, Po-Tsung; Langpoklakpam, Catherine; Chang, Ya-Ting; Huang, Yu-Wen; Lee, Wen-Chung; Tzou, An-Jye; Cheng, Yuh-Jen; Lin, Chun-Hsiung; Kuo, Hao-Chung; Chang, Edward Yi Share Save 
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