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S

S. Keller

university of california santa barbara

90H-index
703Paper Count
3.2WCitation Count
Published Papers 144
Publication Date
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Bias-Insensitive High Linearity of N-Polar Deep Recess GaN HEMTs With Regrown GaN Cap
errIEEE Electron Device Letters
IF4.5
err2026-01-20
err0
PREAI
errBoyu Wang; Emre Akso; Henry Collins; Vineeta Muthuraj; Kamruzzaman Khan; Christopher Clymore; Tanmay Chavan; Matthew Guidry; Stacia Keller; Umesh K. Mishra
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MOCVD Growth of Relaxed, Crack-Free AlGaN on Tiled GaN Substrates
errCRYSTALS
IF2.4
err2025-11-08
err0
errOAAI
errHatui, Nirupam; Collins, Henry; Kayede, Emmanuel; Wu, Feng; Keller, Stacia; Mishra, Umesh K.
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errSave
High-Q; Size-Independent; and Reconfigurable Optical Antennas Embedded in Zero-Index Cavities
errACS Nano
IF16
err2025-10-08
err0
PREAI
errPrasad P. Iyer; Mihir Pendharkar; Anchal Agarwal; Humberto Foronda; Micheal Iza; Umesh K. Mishra; Shuji Nakamura; Steven DenBaars; Stacia Keller; Chris Palmstrøm; Jon A. Schuller
errShare
errSave
Recent Advancements in N-polar GaN HEMT Technology
errCRYSTALS
IF2.4
err2025-09-22
err0
errOAAI
errAkso, Emre; Khan, Kamruzzaman; Collins, Henry; Wang, Boyu; Hamwey, Robert; Chavan, Tanmay; Clymore, Christopher; Li, Weiyi; Odabasi, Oguz; Guidry, Matthew; Keller, Stacia; Ahmadi, Elaheh; DenBaars, Steven P.; Mishra, Umesh
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errSave
Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-04-03
err2
PREAI
errMuthuraj, Vineeta R.; Reilly, Caroline E.; Mates, Thomas; Nakamura, Shuji; DenBaars, Steven P.; Keller, Stacia
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errSave
Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-03-29
err8
errOAAI
errKrishna, Athith; Raj, Aditya; Hatui, Nirupam; Keller, Stacia; Denbaars, Steven; Mishra, Umesh K.
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errSave
Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-03-10
err4
PREAI
errMuthuraj, Vineeta R.; Reilly, Caroline E.; Mates, Thomas; Keller, Stacia; Nakamura, Shuji; DenBaars, Steven P.
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errSave
Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride
errJOURNAL OF COLLOID AND INTERFACE SCIENCE
IF9.7
err2021-12-01
err4
PREAI
errWang, Jianan; Li, Hua; Li, Haoran; Keller, Stacia; Mishra, Umesh K.; Nener, Brett D.; Parish, Giacinta; Atkin, Rob
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errSave
Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-08-18
err19
PREAI
errRomanczyk, Brian; Guidry, Matthew; Zheng, Xun; Shrestha, Pawana; Li, Haoran; Ahmadi, Elaheh; Keller, Stacia; Mishra, Umesh K.
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errSave
Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-07-30
err3
PREAI
errCollins, Henry; Sayed, Islam; Liu, Wenjian; Pasayat, Shubhra S.; Taylor, Aidan A.; Li, Weiyi; Keller, Stacia; Mishra, U. K.
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errSave
2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-06-02
err10
PREAI
errReilly, Caroline E.; Hatui, Nirupam; Mates, Thomas E.; Nakamura, Shuji; DenBaars, Steven P.; Keller, Stacia
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errSave
pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption
errJOURNAL OF COLLOID AND INTERFACE SCIENCE
IF9.7
err2021-02-01
err5
errOAAI
errWang, Jianan; Zhang, Xing; Li, Hua; Wang, Constance; Li, Haoran; Keller, Stacia; Mishra, Umesh K.; Nener, Brett D.; Parish, Giacinta; Atkin, Rob
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errSave
Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-08-14
err56
errOAAI
errPasayat, Shubhra S.; Ley, Ryan; Gupta, Chirag; Wong, Matthew S.; Lynsky, Cheyenne; Wang, Yifan; Gordon, Michael J.; Nakamura, Shuji; Denbaars, Steven P.; Keller, Stacia; Mishra, Umesh K.
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errSave
Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-08-10
err18
errOAAI
errPasayat, Shubhra S.; Hatui, Nirupam; Li, Weiyi; Gupta, Chirag; Nakamura, Shuji; Denbaars, Steven P.; Keller, Stacia; Mishra, Umesh K.
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errSave
Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-07-28
err13
errOAAI
errKrishna, Athith; Raj, Aditya; Hatui, Nirupam; Sayed, Islam; Keller, Stacia; Mishra, Umesh K.
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errSave
SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy
errSCIENTIFIC REPORTS
IF3.9
err2020-07-21
err3
errOAAI
errJanicki, L.; Li, H.; Keller, S.; Mishra, U. K.; Kudrawiec, R.
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errSave
Interfacial N Vacancies in GaN/(Al,Ga)N/GaN Heterostructures
errPHYSICAL REVIEW APPLIED
IF4.4
err2020-04-13
err28
errOAAI
errProzheeva, Vera; Makkonen, Ilja; Li, Haoran; Keller, Stacia; Mishra, Umesh K.; Tuomisto, Filip
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errSave
Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-03-16
err53
errOAAI
errPasayat, Shubhra S.; Gupta, Chirag; Wong, Matthew S.; Wang, Yifan; Nakamura, Shuji; Denbaars, Steven P.; Keller, Stacia; Mishra, Umesh K.
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errSave
An improved methodology for extracting interface state density at Si3N4/GaN
errAPPLIED PHYSICS LETTERS
IF3.6
err2020-01-14
err30
errOAAI
errLiu, Wenjian; Sayed, Islam; Gupta, Chirag; Li, Haoran; Keller, Stacia; Mishra, Umesh
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errSave
Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN
errMATERIALS
IF3.2
err2020-01-04
err32
errOAAI
errPasayat, Shubhra S.; Gupta, Chirag; Wang, Yifan; DenBaars, Steven P.; Nakamura, Shuji; Keller, Stacia; Mishra, Umesh K.
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Research Directions

No research directions
Co-authors
Cooperation Journals
R
Ronald W. Davis
H-index: 160 · Papers: 903
S
Steven P. DenBaars
H-index: 126 · Papers: 1.5K
J
John E. Bowers
H-index: 126 · Papers: 2.3K
J
James S. Speck
H-index: 120 · Papers: 1.5K
S
Shuji Nakamura
H-index: 118 · Papers: 1.1K
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