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SaveShare Save Share Save Share Save Share Save Share Save Share Save Share Save Mechanistic insight into competing precipitation behaviors of phosphorus and oxygen in heavily phosphorus-doped Czochralski silicon
Wu, Defan; Zhao, Tong; Liang, Xingbo; Deng, Tianqi; Chen, Hao; Nie, Qunlin; Ye, Bin; Li, Shenzhong; Tian, Daxi; Yang, Deren; Ma, Xiangyang Share Save Share Save Effects of W contents on the oxidation resistance of (Zr, Hf, Nb, Ta, W)C high-entropy carbides at 800-1200 °CGong, Weilu; Yang, Yiming; Li, Ziwei; Ye, Li; Cui, Haifeng; Han, Weijian; Zhang, Pingxia; Zhao, Tong; Chen, Teng Share Save Share Save Share Save Higher stability of p-type Ga-doped Czochralski silicon for light and elevated-temperature induced degradation: Insights into Ga-related precursorsHu, Zechen; Yang, Lei; Zhao, Tong; Song, Lihui; Hsu, Alex; He, Darren; Cai, Yongmei; Yu, Hao; Yang, Deren; Yu, Xuegong Share Save Share Save Share Save Share Save Share Save Share Save 29-Billion Atoms Molecular Dynamics Simulation With Ab Initio Accuracy on 35 Million Cores of New Sunway SupercomputerWang, Xun; Meng, Xiangyu; Guo, Zhuoqiang; Li, Mingzhen; Liu, Lijun; Li, Mingfan; Xiao, Qian; Zhao, Tong; Sun, Ninghui; Tan, Guangming; Jia, Weile Share Save 
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