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M

M. Heuken

rwth aachen university

40H-index
751Paper Count
8.0KCitation Count
Published Papers 82
Publication Date
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Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors
errAdvanced Electronic Materials
IF5.3
err2026-04-30
err0
errOAAI
errDennis Braun; Jing Liu; Vasilis A. Maroufidis; Hleb Fiadziushkin; Lukas Völkel; Jimin Lee; Sofía Cruces; Annika Grundmann; Ke Ran; Thorsten Wahlbrink; Holger Kalisch; Andrei Vescan; Joachim Mayer; Michael Heuken; Alwin Daus; Max C. Lemme
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Water-based, large-scale transfer of 2D materials grown on sapphire substrates
errnpj 2D Materials and Applications
IF8.8
err2026-04-20
err0
errOAAI
errNico Rademacher; Lukas Völkel; Eros Reato; Martin Otto; Simonas Krotkus; Jan Mischke; Emre Yengel; Christof Mauder; Alex Henning; Michael Heuken; Ke Ran; Joachim Mayer; Max C. Lemme
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Integration of Low-Voltage Nanoscale MoS2 Memristors on CMOS Microchips
errAdvanced Functional Materials
IF19
err2026-02-20
err0
errOAAI
errJimin Lee; Sofía Cruces; Xiaohua Liu; Yang Chen; Vasilis A. Maroufidis; Janghyun Jo; Lukas Völkel; Dennis Braun; Michael Möller; Leon Brackmann; Holger Kalisch; Michael Heuken; Andrei Vescan; Rafal E. Dunin-Borkowski; Joachim Mayer; Stefan Wiefels; Max C. Lemme
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Defect-Engineered Competition Between Exciton Annihilation and Trapping in MOCVD WS2
errChem. Sci.
IF7.4
err2025-11-17
err0
errOAAI
errRuofei Zheng; Leon Josua Daniel; Dedi Sutarma; Christian Viernes; Yingfang Ding; Tobiloba Fabunmi; Gerd Bacher; Michael Heuken; H. Kalisch; Andrei Vescan; Peter Kratzer; Marika Schleberger; German Sciaini
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Real-Time Monitoring of 2D TMDC MOCVD: An In Situ Spectroscopic Reflectance Approach
errADVANCED MATERIALS INTERFACES
IF4.4
err2025-09-01
err0
errOAAI
errTang, Songyao; Wang, Yibing; Fiadziushkin, Hleb; Ding, Yingfang; Ghiami, Amir; Heuken, Michael; Vescan, Andrei; Kalisch, Holger
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Water-assisted multistep MOCVD for wafer-scale layer-by-layer growth of WSe2
errMRS Bulletin
IF4.9
err2025-08-28
err0
errOAAI
errYibing Wang; Songyao Tang; Zhaodong Wang; Yingfang Ding; Hleb Fiadziushkin; Amir Ghiami; Susanne Hoffmann-Eifert; Michael Heuken; Andrei Vescan; Holger Kalisch
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Correction: Showerhead-assisted chemical vapor deposition of CsPbBr3 films for LED applications
errJournal of Materials Research
IF2.9
err2025-07-01
err0
errOAAI
errS. Sanders; G. Simkus; J. Riedel; A. Ost; A. Schmitz; Franziska Münzer; G. Bacher; M. Heuken; A. Vescan; H. Kalisch
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Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors
errnpj 2D Materials and Applications
IF8.8
err2025-05-14
err0
errOAAI
errLukas Völkel; Rana Walied Ahmad; Alana Bestaeva; Dennis Braun; Sofia Cruces; Jimin Lee; Sergej Pasko; Simonas Krotkus; Michael Heuken; Stephan Menzel; Max C. Lemme
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Comparative performance of MoS2 transistors: Statistical study and one-transistor-one-resistive memory integration
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-05-01
err0
errOAAI
errKhorramshahi, Fatemeh; Bohuslavskyi, Heorhii; Murros, Anton; Piacentini, Agata; Heuken, Michael; Lemme, Max; Neumaier, Daniel; Persson, Karl-Magnus
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Band structure alignment in transfer-free MOCVD grown 2D-TMDC heterostructures revealed by ambient KPFM
errAPL MATERIALS
IF4.5
err2025-04-15
err0
errOAAI
errAbdelbaky, M.; Beckmann, Y.; Klein, J.; Fabunmi, T. G.; Stracke, N.; Grundmann, A.; Heuken, M.; Kalisch, H.; Vescan, A.; Kuemmell, T.; Mertin, W.; Bacher, G.
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Contact Resistance Optimization in MoS2 Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-03-11
err0
errOAAI
errFa, Y; Piacentini, A; Macco, B; Kalisch, H; Heuken, M; Vescan, A; Wang, ZX; Lemme, MC
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Improved Reliability of 2D-TMDC Dry Transfer via PMMA and Target Substrate Treatments
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2025-03-01
err0
errOAAI
errGhiami, Amir; Fiadziushkin, Hleb; Sun, Tianyishan; Tang, Songyao; Wang, Yibing; Mayer, Eva; Schneider, Jochen M.; Piacentini, Agata; Lemme, Max C.; Heuken, Michael; Kalisch, Holger; Vescan, Andrei
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Flexible p-Type WSe2 Transistors with Alumina Top-Gate Dielectric
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-10-25
err0
errOAAI
errPhung, Quynh Thi; Voelkel, Lukas; Piacentini, Agata; Esteki, Ardeshir; Grundmann, Annika; Kalisch, Holger; Heuken, Michael; Vescan, Andrei; Neumaier, Daniel; Lemme, Max C.; Daus, Alwin
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Optical Properties and Growth Characteristics of 8-Quinolinolato Lithium (Liq) Nano-Layers Deposited by Gas Transport Deposition
errMICROMACHINES
IF3
err2024-08-28
err0
errOAAI
errZachariadis, Alexandros; Chatzidis, Michalis; Tselekidou, Despoina; Wurzinger, Olaf; Keiper, Dietmar; Baumann, Peter K.; Heuken, Michael; Papadopoulos, Kyparisis; Laskarakis, Argiris; Logothetidis, Stergios; Gioti, Maria
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Self-Powered Photodetectors Based on Scalable MOCVD-Grown WS2-MoS2 Heterostructures
errACS PHOTONICS
IF6.7
err2024-05-09
err3
PREAI
errBeckmann, Yannick; Myja, Henrik; Kramberg, Tom; Konietzka, Julius; Abdelbaky, Mohamed; Grundmann, Annika; Ghiami, Amir; Heuken, Michael; Kalisch, Holger; Vescan, Andrei; Mertin, Wolfgang; Kuemmell, Tilmar; Bacher, Gerd
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Lasing from a Large-Area 2D Material Enabled by a Dual-Resonance Metasurface
errACS NANO
IF16
err2024-05-06
err2
errOAAI
errBarth, Isabel; Deckart, Manuel; Conteduca, Donato; Arruda, Guilherme S.; Hayran, Zeki; Pasko, Sergej; Krotkus, Simonas; Heuken, Michael; Monticone, Francesco; Krauss, Thomas F.; Martins, Emiliano R.; Wang, Yue
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A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructures
errADVANCED MATERIALS INTERFACES
IF4.4
err2024-05-02
err1
PREAI
errMassmeyer, Oliver; Belz, Juergen; Dogahe, Badrosadat Ojaghi; Widemann, Maximilian; Guenkel, Robin; Glowatzki, Johannes; Bergmann, Max; Pasko, Sergej; Krotkus, Simonas; Heuken, Michael; Beyer, Andreas; Volz, Kerstin
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Button shear testing for adhesion measurements of 2D materials
errNATURE COMMUNICATIONS
IF15.7
err2024-03-18
err2
errOAAI
errSchaetz, Josef; Nayi, Navin; Weber, Jonas; Metzke, Christoph; Lukas, Sebastian; Walter, Juergen; Schaffus, Tim; Streb, Fabian; Reato, Eros; Piacentini, Agata; Grundmann, Annika; Kalisch, Holger; Heuken, Michael; Vescan, Andrei; Pindl, Stephan; Lemme, Max C.
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The MoS2-Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS2 Band Structure
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2023-05-30
err1
errOAAI
errWoerdenweber, Henrik; Grundmann, Annika; Wang, Zhaodong; Hoffmann-Eifert, Susanne; Kalisch, Holger; Vescan, Andrei; Heuken, Michael; Waser, Rainer; Karthaeuser, Silvia
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Understanding the impact of heavy ions and tailoring the optical properties of large-area monolayer WS2 using focused ion beam
errNPJ 2D MATERIALS AND APPLICATIONS
IF8.8
err2023-03-29
err13
errOAAI
errSarcan, Fahrettin; Fairbairn, Nicola J.; Zotev, Panaiot; Severs-Millard, Toby; Gillard, Daniel J.; Wang, Xiaochen; Conran, Ben; Heuken, Michael; Erol, Ayse; Tartakovskii, Alexander I.; Krauss, Thomas F.; Hedley, Gordon J.; Wang, Yue
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Research Directions

No research directions
Co-authors
Cooperation Journals
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