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SaveShare Save Improvement of AIN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing
Legallais, Maxime; Mehdi, Hussein; David, Sylvain; Bassani, Franck; Labau, Sebastien; Pelissier, Bernard; Baron, Thierry; Martinez, Eugenie; Ghibaudo, Gerard; Salem, Bassem Share Save Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2KCasse, Mikael; Paz, Brune Cardoso; Ghibaudo, Gerard; Poiroux, Thierry; Vincent, Emmanuel; Galy, Philippe; Juge, Andre; Gaillard, Fred; de Franceschi, Silvano; Meunier, Tristan; Vinet, Maud Share Save Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layersHaffner, T.; Mahjoub, M. A.; Labau, S.; Aubin, J.; Hartmann, J. M.; Ghibaudo, G.; David, S.; Pelissier, B.; Bassani, F.; Salem, B. Share Save Precise Extraction of Charge Carrier Mobility for Organic TransistorsXu, Yong; Li, Yun; Li, Songlin; Balestra, Francis; Ghibaudo, Gerard; Li, Wenwu; Lin, Yen-Fu; Sun, Huabin; Wan, Jing; Wang, Xinran; Guo, Yufeng; Shi, Yi; Noh, Yong-Young Share Save Share Save Impact of Wet Treatments on the Electrical Performance of Ge0.9Sn0.1-Based p-MOS CapacitorsMahjoub, Mohamed Aymen; Haffner, Thibault; Labau, Sebastien; Eustache, Etienne; Aubin, Joris; Hartmann, Jean-Michel; Ghibaudo, Gerard; Pelissier, Bernard; Bassani, Franck; Salem, Bassem Share Save Share Save Share Save Share Save Share Save Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube NetworksPiao, Mingxing; Joo, Min-Kyu; Na, Junhong; Kim, Yun-Jeong; Mouis, Mireille; Ghibaudo, Gerard; Roth, Siegmar; Kim, Wung-Yeon; Jang, Ho-Kyun; Kennedy, Gary P.; Dettlaff-Weglikowska, Urszula; Kim, Gyu-Tae Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save 
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