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SaveShare Save Share Save Share Save Share Save Share Save The Role of a Ta2O5 Seed Layer on Phase Evolution and Epitaxial Growth of Ta3N5 Thin Films on Al2O3(0001)
Chang, JC; Palisaitis, J; Kalal, S; Gueorguiev, GK; Persson, AR; Tseng, EN; Greczynski, G; Persson, POÅ; Sun, JW; Hsu, YK; Hultman, L; Birch, J; Hsiao, CL Share Save Share Save Share Save W-ion irradiation promotes dense TiBx film growth during magnetron sputtering without substrate heatingViskupova, K.; Sroba, V.; Lu, J.; Primetzhofer, D.; Wicher, B.; Rogoz, V.; Roch, T.; Truchly, M.; Mikula, M.; Petrov, I.; Hultman, L.; Greczynski, G. Share Save Synthesis of goldene comprising single-atom layer gold (vol 3, pg 744, 2024)Kashiwaya, Shun; Shi, Yuchen; Lu, Jun; Sangiovanni, Davide G.; Greczynski, Grzegorz; Magnuson, Martin; Andersson, Mike; Rosen, Johanna; Hultman, Lars Share Save Share Save Share Save III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed LayersPingen, Katrin; Wolff, Niklas; Mohammadian, Zahra; Sandstroem, Per; Beuer, Susanne; von Hauff, Elizabeth; Kienle, Lorenz; Hultman, Lars; Birch, Jens; Hsiao, Ching-Lien; Hinz, Alexander M. Share Save Determination of effective Ga/N ratio to control GaN growth behavior in liquid-target reactive magnetron sputter epitaxyLo, Yi-Ling; Prabaswara, Aditya; Chang, Jui-Che; Bairagi, Samiran; Zhirkov, Igor; Sandstrom, Per; Rosen, Johanna; Jarrendahl, Kenneth; Hultman, Lars; Birch, Jens; Hsiao, Ching - Lien Share Save Share Save Share Save Share Save Share Save Share Save 
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