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C.A. Dimitriadis

aristotle university of thessaloniki

36H-index
319Paper Count
4.9KCitation Count
Published Papers 25
Publication Date
Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors
err2012-12-14
err10
errOAAI
errTheodorou, C. G.; Fasarakis, N.; Hoffman, T.; Chiarella, T.; Ghibaudo, G.; Dimitriadis, C. A.
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Growth of β-FeSi2 particles on silicon by reactive deposition epitaxy
err2008-01-01
err18
PREAI
errVouroutzis, N.; Zorba, T. T.; Dimitriadis, C. A.; Paraskevopoulos, K. M.; Dosza, L.; Molnar, G.
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Photoluminescence and optically detected magnetic resonance investigations of wurtzite phase 4H-SiC
err2008-01-01
err6
PREAI
errIvanov, V. Yu.; Godlewski, M.; Kalabukhova, E. N.; Dimitriadis, C. A.; Zekentes, K.
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Analytical current-voltage model for nanocrystalline silicon thin-film transistors
err2006-11-08
err13
PREAI
errHatzopoulos, A. T.; Pappas, I.; Tassis, D. H.; Arpatzanis, N.; Dimitriadis, C. A.; Templier, F.; Oudwan, M.
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Low-frequency noise spectroscopy in Au/n-GaAs Schottky diodes with InAs quantum dots -: art. no. 163109
err2005-10-11
err10
PREAI
errTsormpatzoglou, A; Hastas, NA; Tassis, DH; Dimitriadis, CA; Kamarinos, G; Frigeri, P; Franchi, S; Gombia, E; Mosca, R
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Thickness dependent structure of β-FeSi2 grown on silicon by solid phase epitaxy
err2005-05-01
err10
PREAI
errVouroutzis, N; Zorba, TT; Dimitriadis, CA; Paraskevopoulos, KM; Dózsa, L; Molnár, G
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Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors
err2004-04-19
err0
PREAI
errHatzopoulos, A; Dimitriadis, CA; Pananakakis, G; Ghibaudo, G; Kamarinos, G
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Investigation of noise sources in platinum silicide Schottky barrier diodes
err2002-02-25
err21
PREAI
errPapatzika, S; Hastas, NA; Angelis, CT; Dimitriadis, CA; Kamarinos, G; Lee, JI
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Electrical properties of magnetron sputtered amorphous carbon films with sequential sp3-rich/sp2-rich layered structure
err2001-11-12
err5
PREAI
errHastas, NA; Dimitriadis, CA; Tassis, DH; Panayiotatos, Y; Logothetidis, S; Papadimitriou, D
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Charge carrier response time in sputtered a-C/n-Si heterojunctions
err2001-10-08
err17
PREAI
errKonofaos, N; Angelis, CT; Evangelou, EK; Dimitriadis, CA; Logothetidis, S
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Electrical characterization of nanocrystalline carbon-silicon heterojunctions
err2001-07-30
err25
PREAI
errHastas, NA; Dimitriadis, CA; Tassis, DH; Logothetidis, S
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Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature
err2001-03-19
err10
PREAI
errKonofaos, N; Angelis, CT; Evangelou, EK; Panayiotatos, Y; Dimitriadis, CA; Logothetidis, S
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Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors
err2000-04-24
err16
PREAI
errAngelis, CT; Dimitriadis, CA; Farmakis, FV; Brini, J; Kamarinos, G; Miyasaka, M
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Electrical and noise properties of thin-film transistors on very thin excimer laser annealed polycrystalline silicon films
err1999-06-14
err4
PREAI
errAngelis, CT; Dimitriadis, CA; Farmakis, FV; Kamarinos, G; Brini, J; Miyasaka, M
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Parameter extraction in non-ideal thermionic emission diodes
err1999-04-01
err1
PREAI
errLee, JI; Brini, J; Boussey, J; Dimitriadis, CA
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