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R
R. Liu
shenzhen university
15
H-index
37
Paper Count
1.3K
Citation Count
0
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Published Papers
12
Publication Date
Publication Date
Impact Factor
Citations
Fully exploiting solar energy with building envelops: Experimental study on an adjustable photovoltaic green facade
ENERGY AND BUILDINGS
IF
7.1
2025-04-01
0
PRE
AI
Li, Chunying; Xie, Jixing; Liu, Ruixue; Tan, Junyi; Zhu, Xiaojiao; Li, Na; Tang, Haida
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A cross-scale framework for evaluating flexibility values of battery and fuel cell electric vehicles
NATURE COMMUNICATIONS
IF
15.7
2024-01-04
4
OA
AI
Liu, Ruixue; He, Guannan; Wang, Xizhe; Mallapragada, Dharik; Zhao, Hongbo; Shao-Horn, Yang; Jiang, Benben
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Basal-plane slip in InGaN/GaN heterostructures in the presence of threading dislocations
APPLIED PHYSICS LETTERS
IF
3.6
2007-04-26
21
PRE
AI
Mei, J.; Liu, R.; Ponce, F. A.; Omiya, H.; Mukai, T.
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Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures
APPLIED PHYSICS LETTERS
IF
3.6
2006-11-17
71
PRE
AI
Liu, R.; Mei, J.; Srinivasan, S.; Ponce, F. A.; Omiya, H.; Narukawa, Y.; Mukai, T.
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Prismatic stacking faults in epitaxially laterally overgrown GaN
APPLIED PHYSICS LETTERS
IF
3.6
2006-04-05
80
PRE
AI
Mei, J; Srinivasan, S; Liu, R; Ponce, FA; Narukawa, Y; Mukai, T
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Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering
APPLIED PHYSICS LETTERS
IF
3.6
2005-11-18
59
PRE
AI
Sun, WH; Zhang, JP; Yang, JW; Maruska, HP; Khan, MA; Liu, R; Ponce, FA
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Luminescence from stacking faults in gallium nitride
APPLIED PHYSICS LETTERS
IF
3.6
2005-01-04
358
PRE
AI
Liu, R; Bell, A; Ponce, FA; Chen, CQ; Yang, JW; Khan, MA
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Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth
APPLIED PHYSICS LETTERS
IF
3.6
2004-10-18
24
PRE
AI
Bell, A; Liu, R; Parasuraman, UK; Ponce, FA; Kamiyama, S; Amano, H; Akasaki, I
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Slip systems and misfit dislocations in InGaN epilayers
APPLIED PHYSICS LETTERS
IF
3.6
2003-12-22
225
PRE
AI
Srinivasan, S; Geng, L; Liu, R; Ponce, FA; Narukawa, Y; Tanaka, S
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Atomic arrangement at the AlN/Si(111) interface
APPLIED PHYSICS LETTERS
IF
3.6
2003-08-04
143
PRE
AI
Liu, R; Ponce, FA; Dadgar, A; Krost, A
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Observation of coreless edge and mixed dislocations in Mg-doped Al0.03Ga0.97N
APPLIED PHYSICS LETTERS
IF
3.6
2002-12-09
23
PRE
AI
Cherns, D; Wang, YQ; Liu, R; Ponce, FA
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Atomic arrangement at the AlN/ZrB2 interface
APPLIED PHYSICS LETTERS
IF
3.6
2002-10-21
37
PRE
AI
Liu, R; Bell, A; Ponce, FA; Kamiyama, S; Amano, H; Akasaki, I
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Research Directions
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Co-authors
Cooperation Journals
Y
Yang Shao‐Horn
H-index: 137 · Papers: 790
H
Hiroshi Amano
H-index: 88 · Papers: 1.8K
I
Isamu Akasaki
H-index: 76 · Papers: 1.2K
T
Takashi Mukai
H-index: 70 · Papers: 363
F
F. A. Ponce
H-index: 60 · Papers: 507
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