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Lutz Kirste

fraunhofer gesellschaft

36H-index
287Paper Count
4.6KCitation Count
Published Papers 65
Publication Date
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Strain-driven amorphization in Al1-xYxN thin films and lattice-engineering stabilization illustrated by In1-xYxN
errJournal of Applied Physics
IF2.5
err2026-05-14
err0
PREAI
errAfshar, N.; Wolff, N.; Horich, F.; Stranak, P.; Kirste, L.; Kienle, L.; Dadgar, A.; Ambacher, O.
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Aluminum gallium nitride grown by halide vapor phase epitaxy: growth on misoriented gallium nitride substrates
errApplied Surface Science
IF6.9
err2026-03-31
err0
PREAI
errArianna Jaroszynska; Petro Sadovy; Lutz Kirste; Karol Pozyczka; Robert Kucharski; Michal Bockowski; Tomasz Sochacki
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GaSb-based 2062 nm single-frequency VECSEL with 3.2 W output power
errjournal of physics: photonics
IF0
err2026-03-23
err0
errOAAI
errSteffen Adler; Peter Holl; Elke Diwo-Emmer; Lutz Kirste; Marcel Rattunde
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Diffusion of oxygen in aluminum nitride
errJournal of Applied Physics
IF2.5
err2026-03-14
err0
PREAI
errTroger-Neuhaus, Jan; Schulz, Tobias; Hartmann, Carsten; Remmele, Thilo; Hagedorn, Sylvia; Kirste, Lutz; Hagenhoff, Birgit; Bracht, Hartmut
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Investigation of Ti/Al/Ni/Au ohmic contacts for AlScN/GaN HEMTs
errJournal of Applied Physics
IF2.5
err2026-03-07
err0
PREAI
errStreicher, Isabel; Milazzo, Simone; Stranak, Patrik; Kirste, Lutz; Duarte, Teresa; Di Franco, Salvatore; Votadoro, Valerio; Leone, Stefano; Greco, Giuseppe; Roccaforte, Fabrizio
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Chemical Vapor Deposition of Nitrides by Carbon-Free Brominated Precursors
errPhysica Status Solidi A-Applications and Materials Science
IF1.9
err2026-02-24
err0
errOAAI
errLeone, Stefano; Duarte, Teresa; Menner, Hanspeter; Richter, Jannik; Kirste, Lutz; Maegdefessel, Sven; Hoffmann, Felix; So, Byeongchan; Quay, Ruediger
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On germanium doping of gallium nitride: Ion implantation vs in-situ doping during growth
errMaterials Science in Semiconductor Processing
IF4.6
err2026-02-19
err0
PREAI
errKacper Sierakowski; Leszek Konczewicz; Lutz Kirste; Karol Kawka; Pawel Kempisty; Krzysztof Gołyga; Auditee Majumder Momo; Robert Czernecki; Patrik Straňák; Marcin Turek; Tomasz Sochacki; Ramón Collazo; Zlatko Sitar; Michał Boćkowski
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Performance enhancement of AlGaN/GaN-based high electron mobility transistors with sputtered AlScN gate dielectric
errJournal of Applied Physics
IF2.5
err2026-02-14
err1
errOAAI
errYassine, A.; Driad, R.; Nair, A.; Ott, P.; Kirste, L.; Stranak, P.; Czap, H.; Mikulla, M.; Yassine, M.; Ambacher, O.
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Stress management of large size (001) and (111) diamond wafers for quantum-optical applications
errJournal of Physics D: Applied Physics
IF3.2
err2026-01-23
err0
errOAAI
errJan Engels; Jürgen Weippert; Jan Kustermann; Sven Mägdefessel; Niklas Mathes; Jan Jeske; Lutz Kirste; Peter Knittel; Patricia Klar; Tobias Fehrenbach; Christoph Wild; Vadim Lebedev
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Enhancing NV concentration in delta-doped diamond via low-pressure high-temperature annealing
errDiamond and Related Materials
IF5.1
err2026-01-16
err0
errOAAI
errPhilip Schätzle; Sven Mägdefessel; Leon Büttner; Patrik Straňák; Aurelién Commans; Lutz Kirste; Rebekka Eberle; Volker Cimalla; Peter Knittel
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AlScN/GaN Multichannel Heterostructures Grown by Metal–Organic Chemical Vapor Deposition
errAdvanced Materials Interfaces
IF4.4
err2025-10-20
err0
errOAAI
errTeresa Duarte; Isabel Streicher; Patrik Straňák; Lutz Kirste; Mario Prescher; Niklas Wolff; Susanne Beuer; Lorenz Kienle; Rüdiger Quay; Stefano Leone
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Wafer Scale N-Doped Diamond (111) with Mainly Nitrogen Spin Bath Limited Nitrogen Vacancy Coherence Times from Heteroepitexial Growth
errPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
IF2
err2025-10-01
err0
errOAAI
errWeippert, Jurgen; Engels, Jan; Kustermann, Jan; Fehrenbach, Tobias; Wild, Christoph; Klar, Patricia; Stranak, Patrik; Prescher, Mario; Kirste, Lutz; Magdefessel, Sven; Knittel, Peter; Lebedev, Vadim
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Thermal annealing effects on the electrical and structural properties of Mo Schottky contacts to n-type 4H-SiC
errMaterials Science in Semiconductor Processing
IF4.6
err2025-06-19
err0
errOAAI
errM. Vivona; I. Streicher; L. Kirste; A.M. Mio; G. Nicotra; P. Fiorenza; F. Giannazzo; F. Roccaforte
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Development of Semi-Insulating gallium nitride layers on native substrates by magnesium ion implantation and Ultra-High-Pressure annealing
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-06-04
err0
PREAI
errSochacki, Tomasz; Kirste, Lutz; Sierakowski, Kacper; Jaroszynska, Arianna; Jakiela, Rafal; Fijalkowski, Michal; Zajzc, Marcin; Koziorowska, Julita Smalc; Lachowski, Artur; Turek, Marcin; Stranak, Patrik; Sumida, Kensuke; Bockowski, Michal
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Electrical properties of SiN y /Al1-x Sc x N/GaN-based metal-insulator-semiconductor structures
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-05-15
err0
errOAAI
errYassine, A.; Yassine, M.; Streicher, I.; Driad, R.; Kirste, L.; Stranak, P.; Doering, P.; Leone, S.; Ambacher, O.
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Bragg diffraction imaging characterization of crystal defects in GaN (0001) substrates: Comparison of the growth method and the seed approach
errProgress in Crystal Growth and Characterization of Materials
IF1.9
err2025-05-08
err0
PREAI
errLutz Kirste; Thu Nhi Tran-Caliste; Tomasz Sochacki; Jan L. Weyher; Patrik Straňák; Robert Kucharski; Karolina Grabianska; José Baruchel; Michal Bockowski
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Oxygen Doping in Ferroelectric Wurtzite-type Al0.73Sc0.27N: Improved Leakage and Polarity Control
errADVANCED ELECTRONIC MATERIALS
IF5.3
err2025-03-18
err0
errOAAI
errIslam, MR; Wolff, N; Schönweger, G; Kreutzer, TN; Brown, M; Gremmel, M; Ollanescu-Orendi, ES; Stranák, P; Kirste, L; Brennecka, GL; Fichtner, S; Kienle, L
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Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-01-02
err0
errOAAI
errSundarapandian, Balasubramanian; Raghuwanshi, Mohit; Stranak, Patrik; Yu, Yuan; Lyu, Haiyan; Prescher, Mario; Kirste, Lutz; Ambacher, Oliver
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Sputtered aluminum nitride waveguides for the telecommunication spectrum with less than 0.16 dB/cm propagation loss
errOPTICS EXPRESS
IF3.3
err2024-12-09
err0
errOAAI
errSingh, Radhakant; Raghuwanshi, Mohit; Sundarapandian, Balasubramanian; Thomas, Rijil; Kirste, Lutz; Suckow, Stephan; Lemme, Max c.
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Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal-organic chemical vapor deposition
errAPL MATERIALS
IF4.5
err2024-05-03
err1
errOAAI
errStreicher, Isabel; Stranak, Patrik; Kirste, Lutz; Prescher, Mario; Mueller, Stefan; Leone, Stefano
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Research Directions

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Co-authors
Cooperation Journals
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R. Jürgen Behm
H-index: 113 · Papers: 808
J
Jörg Neugebauer
H-index: 99 · Papers: 1.3K
K
K. Becker
H-index: 84 · Papers: 916
J
John E. Northrup
H-index: 74 · Papers: 271
O
O. Ambacher
H-index: 73 · Papers: 964
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