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SaveEffect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric
Yang, CW; Fang, YK; Chen, CH; Chen, SF; Lin, CY; Lin, CS; Wang, MF; Lin, YM; Hou, TH; Chen, CH; Yao, LG; Chen, SC; Liang, MS
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