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Marianne Germain

interuniversity microelectronics centre

24H-index
154Paper Count
2.2KCitation Count
Published Papers 9
Publication Date
A micro-electro-mechanical accelerometer based on gallium nitride on silicon
err2023-01-18
err4
errOAAI
errMorelle, C.; Theron, D.; Roch-Jeune, I.; Tilmant, P.; Okada, E.; Vaurette, F.; Grimbert, B.; Derluyn, J.; Degroote, S.; Germain, M.; Faucher, M.
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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications
err2020-09-25
err15
errOAAI
errTajalli, Alaleh; Meneghini, Matteo; Besendoerfer, Sven; Kabouche, Riad; Abid, Idriss; Puesche, Roland; Derluyn, Joff; Degroote, Stefan; Germain, Marianne; Meissner, Elke; Zanoni, Enrico; Medjdoub, Farid; Meneghesso, Gaudenzio
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Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
err2020-01-17
err4
errOAAI
errTajalli, Alaleh; Borga, Matteo; Meneghini, Matteo; De Santi, Carlo; Benazzi, Davide; Besendoerfer, Sven; Pusche, Roland; Derluyn, Joff; Degroote, Stefan; Germain, Marianne; Kabouche, Riad; Abid, Idriss; Meissner, Elke; Zanoni, Enrico; Medjdoub, Farid; Meneghesso, Gaudenzio
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Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth
err2014-01-09
err32
PREAI
errGregusova, D.; Jurkovic, M.; Hascik, S.; Blaho, M.; Seifertova, A.; Fedor, J.; Tapajna, M.; Froehlich, K.; Vogrincic, P.; Liday, J.; Derluyn, J.; Germain, M.; Kuzmik, J.
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Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors
err2011-12-01
err11
PREAI
errSchuller, Tim A.; Kuball, Martin; Flower, Stephen E.; James, Tony D.; Fossey, John S.; Marcon, Denis; Das, Jo; Degroot, Stefan; Germain, Marianne; Sarua, Andrei
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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal
err2010-09-13
err63
PREAI
errVisalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Derluyn, Joff; Das, Johan; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf
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Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors
err2006-11-15
err21
PREAI
errVan Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M. R.; Germain, M.
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The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN -: art. no. 061908
err2005-08-02
err103
PREAI
errVan Daele, B; Van Tendeloo, G; Ruythooren, W; Derluyn, J; Leys, MR; Germain, M
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