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Optical Degradation of 845 nm VCSELs With Different Oxide Apertures for Silicon Photonics Zenari, Michele; Buffolo, Matteo; Perale, Filippo; De Santi, Carlo; Goyvaerts, Jeroen; Grabowski, Alexander; Gustavsson, Johan S.; Baets, Roel; Roelkens, Gunther; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Share Save
Identification of boron-related traps via capacitance spectroscopy in diamond Schottky diodes Biasin, Giacomo; Fregolent, Manuel; Buffolo, Matteo; De Santi, Carlo; Bassaler, Julien; Maurya, Vishwajeet; Letellier, Juliette; Meneghesso, Gaudenzio; Zanoni, Enrico; Verzellesi, Giovanni; Chini, Alessandro; Meneghini, Matteo Share Save
720 V quasi-vertical GaN-on-silicon p-n diodes with surge capability fabricated using selective area growth El Amrani, Mohammed; Lyu, Junrui; Wen, Xinyi; Marcuzzi, Alberto; Plaza Arguello, David; M'qaddem, Zakariae; Kaltsounis, Thomas; El Rammouz, Hala; Meneghesso, Gaudenzio; Meneghini, Matteo; Charles, Matthew; Buckley, Julien; Chowdhury, Srabanti Share Save
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Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques Fregolent, Manuel; Tomasi, Marco; De Santi, Carlo; Buffolo, Matteo; Tadmor, Liad; Brusaterra, Enrico; Treidel, Eldad Bahat; Cester, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Share Save
Modeling the capacitance-voltage characteristics of AlGaN-based UV-C LEDs Roccato, Nicola; Piva, Francesco; Buffolo, Matteo; De Santi, Carlo; Trivellin, Nicola; Schilling, Marcel; Muhin, Anton; Hoepfner, Jakob; Guttmann, Martin; Wernicke, Tim; Kneissl, Michael; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Share Save
Degradation of 1.3 μm Quantum Dot Laser Diodes for Silicon Photonics: Dependence on the Number of Dot-in-a-Well Layers Zenari, Michele; Gioannini, Mariangela; Buffolo, Matteo; Tibaldi, Alberto; De Santi, Carlo; Norman, Justin; Shang, Chen; Dumont, Mario; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Share Save
Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics Zenari, Michele; Buffolo, Matteo; Rampazzo, Fabiana; De Santi, Carlo; Rossi, Francesca; Lazzarini, Laura; Goyvaerts, Jeroen; Grabowski, Alexander; Gustavsson, Johan S.; Baets, Roel; Larsson, Anders; Roelkens, Gunther; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Share Save
Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs Zagni, Nicolo; Fregolent, Manuel; Verzellesi, Giovanni; Bergamin, Francesco; Favero, Davide; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Huber, Christian; Meneghini, Matteo; Pavan, Paolo Share Save
Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications Medjdoub, Farid; Shinohara, Keisuke; Thome, Fabian; Moon, Jeong-sun; Chumbes, Eduardo; Guidry, Matthew T.; Mishra, Umesh; Zanoni, Enrico; Meneghini, Matteo; Meneghesso, Gaudenzio; Pomeroy, James W.; Thingujam, Terirama; Kuball, Martin Share Save
Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs Roccato, Nicola; Piva, Francesco; Buffolo, Matteo; Santi, Carlo De; Trivellin, Nicola; Haller, Camille; Carlin, Jean-Francois; Grandjean, Nicolas; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Share Save
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Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization Zenari, Michele; Buffolo, Matteo; De Santi, Carlo; Norman, Justin; Hughes, Eamonn T.; Bowers, John E.; Herrick, Robert; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo Share Save
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