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J

Josef Lutz

Technische Universitat Chemnitz

35H-index
286Paper Count
5.3KCitation Count
Published Papers 9
Publication Date
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On the Reverse Recovery of SiC MOSFET Inverse Diodes
errIEEE Transactions on Electron Devices
IF3.2
err2026-03-01
err0
PREAI
errLutz, J.; Maitra, A.; Mysore, M. L.; Baumler, C.; Basler, T.
errShare
errSave
Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Test
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2024-12-01
err2
errOAAI
errLiu, Shenyi; Vuorinen, Vesa; Liu, Xing; Fredrikson, Olli; Brand, Sebastian; Tiwary, Nikhilendu; Lutz, Josef; Paulasto-Krockel, Mervi
errShare
errSave
High Cycle Fatigue Testing of Silicon IGBT Devices Under Application-Close Conditions
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2023-11-01
err6
PREAI
errSchwabe, Christian; Thoenelt, Nick; Lutz, Josef; Basler, Thomas
errShare
errSave
Study on the IGBT Short Circuit Type II Behavior Considering the Plasma Effect
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2023-01-01
err1
PREAI
errLiu, Xing; Mysore, Madhu-Lakshman; Lutz, Josef; Basler, Thomas
errShare
errSave
Temperature Influence on the Accuracy of the Transient Dual Interface Method for the Junction-to-Case Thermal Resistance Measurement
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2021-07-01
err20
PREAI
errDeng, Erping; Chen, Weinan; Heimler, Patrick; Lutz, Josef
errShare
errSave
Correction of Delay-Time-Induced Maximum Junction Temperature Offset During Electrothermal Characterization of IGBT Devices
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2021-03-01
err22
PREAI
errDeng, Erping; Borucki, Ludger; Lutz, Josef
errShare
errSave
The Influence of the Gate Driver and Common-Source Inductance on the Short-Circuit Behavior of IGBT Modules and Protection
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2020-10-01
err9
PREAI
errLiu, Xing; Kowalsky, Jens; Herrmann, Clemens; Baeumler, Christia; Lutz, Josef
errShare
errSave
Experimental Investigation of Linear Cumulative Damage Theory With Power Cycling Test
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2019-05-01
err27
PREAI
errZeng, Guang; Herold, Christian; Methfessel, Torsten; Schaefer, Marc; Schilling, Oliver; Lutz, Josef
errShare
errSave
Difference in Device Temperature Determination Using p-n-Junction Forward Voltage and Gate Threshold Voltage
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2019-03-01
err63
PREAI
errZeng, Guang; Cao, Haiyang; Chen, Weinan; Lutz, Josef
errShare
errSave

Research Directions

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Co-authors
Cooperation Journals
O
Oliver Schilling
H-index: 53 · Papers: 397
A
Arindam Maitra
H-index: 45 · Papers: 267
V
Vesa Vuorinen
H-index: 27 · Papers: 157
C
Christian Herold
H-index: 26 · Papers: 104
M
Mervi Paulasto‐Kröckel
H-index: 23 · Papers: 176
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