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Anant Agarwal

The Ohio State University

74H-index
713Paper Count
2.5WCitation Count
Published Papers 29
Publication Date
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Junction Temperature-Based Adaptive Short Circuit Detection Technique for SiC MOSFETs
errIEEE Transactions on Industrial Electronics
IF7.2
err2026-04-21
err0
PREAI
errAditya Aman; Abhishek Chanekar; Sandeep Anand; Abhinav Arya; Anant K. Agarwal
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A Novel Low-Voltage-Based Methodology for Short-Circuit Withstand Time Screening of Commercial 4H-SiC MOSFETs
errElectronics
IF2.6
err2026-01-29
err0
errOAAI
errMonikuntala Bhattacharya; Michael Jin; Hengyu Yu; Shiva Houshmand; Marvin H. White; Atsushi Shimbori; Anant K. Agarwal
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Repetitive-Avalanche-Induced Degradation in 1.2-kV SiC Trench-Gate MOSFETs and a Practical R-UIS-Based Screening Method
errIEEE Transactions on Power Electronics
IF6.5
err2025-12-26
err0
PREAI
errHengyu Yu; Michael Jin; Monikuntala Bhattacharya; Shiva Houshmand; Tianshi Liu; Shengnan Zhu; Atsushi Shimbori; Marvin H. White; Anant K. Agarwal
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Analyzing the Impact of Gate Oxide Screening on Interface Trap Density in SiC Power MOSFETs Using a Novel Temperature-Triggered Method
errMICROMACHINES
IF3
err2025-03-25
err0
errOAAI
errBhattacharya, Monikuntala; Jin, Michael; Yu, Hengyu; Houshmand, Shiva; Qian, Jiashu; White, Marvin H.; Shimbori, Atsushi; Agarwal, Anant K.
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Silicon Carbide materials and devices: power electronics and innovative applications
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-11-01
err0
PREAI
errRoccaforte, Fabrizio; Alquier, Daniel; Kimoto, Tsunenobu; Agarwal, Anant
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Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-05-01
err5
errOAAI
errShi, Limeng; Qian, Jiashu; Jin, Michael; Bhattacharya, Monikuntala; Yu, Hengyu; Shimbori, Atsushi; White, Marvin H.; Agarwal, Anant K.
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Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs
errMATERIALS
IF3.2
err2024-03-22
err4
errOAAI
errQian, Jiashu; Shi, Limeng; Jin, Michael; Bhattacharya, Monikuntala; Shimbori, Atsushi; Yu, Hengyu; Houshmand, Shiva; White, Marvin H.; Agarwal, Anant K.
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An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures
errMICROMACHINES
IF3
err2024-01-25
err7
errOAAI
errQian, Jiashu; Shi, Limeng; Jin, Michael; Bhattacharya, Monikuntala; Shimbori, Atsushi; Yu, Hengyu; Houshmand, Shiva; White, Marvin H.; Agarwal, Anant K.
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Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs*
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-01-01
err1
errOAAI
errIsukapati, Sundar Babu; Zhang, Hua; Liu, Tianshi; Gupta, Utsav; Ashik, Emran; Morgan, Adam J.; Jang, Seung Yup; Lee, Bongmook; Sung, Woongje; Fayed, Ayman; Agarwal, Anant K.
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A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching
errMATERIALS
IF3.2
err2022-09-27
err6
errOAAI
errZhu, Shengnan; Liu, Tianshi; Fan, Junchong; Salemi, Arash; White, Marvin H.; Sheridan, David; Agarwal, Anant K.
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Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs
errMATERIALS
IF3.2
err2022-08-30
err8
errOAAI
errZhu, Shengnan; Liu, Tianshi; Fan, Junchong; Maddi, Hema Lata Rao; White, Marvin H.; Agarwal, Anant K.
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Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs
errIEEE ACCESS
IF3.6
err2021-01-01
err22
errOAAI
errYu, Susanna; White, Marvin H.; Agarwal, Anant K.
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High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers
errAPPLIED PHYSICS LETTERS
IF3.6
err2014-11-06
err65
PREAI
errLichtenwalner, Daniel J.; Cheng, Lin; Dhar, Sarit; Agarwal, Anant; Palmour, John W.
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errSave
Power Optimization in Embedded Systems via Feedback Control of Resource Allocation
errIEEE TRANSACTIONS ON CONTROL SYSTEMS TECHNOLOGY
IF3.9
err2013-01-01
err21
PREAI
errMaggio, Martina; Hoffmann, Henry; Santambrogio, Marco D.; Agarwal, Anant; Leva, Alberto
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Selecting Spatiotemporal Patterns for Development of Parallel Applications
errIEEE TRANSACTIONS ON PARALLEL AND DISTRIBUTED SYSTEMS
IF6
err2012-10-01
err4
PREAI
errHoffmann, Henry; Agarwal, Anant; Devadas, Srinivas
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Modeling, Simulation, and Validation of a Power SiC BJT
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2012-10-01
err23
errOAAI
errGachovska, Tanya; Hudgins, Jerry L.; Bryant, Angus; Santi, Enrico; Mantooth, H. Alan; Agarwal, Anant K.
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SiC Power Devices for Microgrids
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2010-12-01
err150
PREAI
errZhang, Qingchun (Jon); Callanan, Robert; Das, M. K.; Ryu, Sei-Hyung; Agarwal, Anant K.; Palmour, John W.
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High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-10-16
err45
PREAI
errLichtenwalner, Daniel J.; Misra, Veena; Dhar, Sarit; Ryu, Sei-Hyung; Agarwal, Anant
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Relationship between 4H-SiC/SiO2 transition layer thickness and mobility
errAPPLIED PHYSICS LETTERS
IF3.6
err2009-07-20
err92
PREAI
errBiggerstaff, T. L.; Reynolds, C. L., Jr.; Zheleva, T.; Lelis, A.; Habersat, D.; Haney, S.; Ryu, S. -H.; Agarwal, A.; Duscher, G.
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10-kV SiC MOSFET-Based Boost Converter
errIEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
IF4.5
err2009-01-01
err66
PREAI
errWang, Jun; Zhou, Xiaohu; Li, Jun; Zhao, Tiefu; Huang, Alex Q.; Callanan, Robert; Husna, Fatima; Agarwal, Anant
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Research Directions

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Co-authors
Cooperation Journals
仉华 cover
仉华 (Hua Zhang)
H-index: 205 · Papers: 2.7K
S
Srinivas Devadas
H-index: 90 · Papers: 545
A
Alex Q. Huang
H-index: 81 · Papers: 914
T
Tsunenobu Kimoto
H-index: 72 · Papers: 1.0K
J
John W. Palmour
H-index: 55 · Papers: 489
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