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H

H. Morkoç̌

Virginia Commonwealth University

102H-index
1.3KPaper Count
5.8WCitation Count
Published Papers 140
Publication Date
Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure
err2024-03-11
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PREAI
errHasan, Samiul; Jewel, Mohi Uddin; Crittenden, Scott R.; Zakir, Md Ghulam; Nipa, Nifat Jahan; Avrutin, Vitaliy; Ozgur, Uemit; Morkoc, Hadis; Ahmad, Iftikhar
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Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure
err2021-06-21
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PREAI
errSermuksnis, E.; Liberis, J.; Simukovic, A.; Matulionis, A.; Ding, K.; Avrutin, V; Ozgur, U.; Morkoc, H.
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A Platform for Complementary Metal-Oxide-Semiconductor Compatible Plasmonics: High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with a MgO Interlayer
err2021-05-24
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errOAAI
errDing, Kai; Fomra, Dhruv; Kvit, Alexander, V; Morkoc, Hadis; Kinsey, Nathaniel; Ozgur, Umit; Avrutin, Vitaliy
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Optically Transparent Antennas and Filters
err2019-06-01
err73
PREAI
errGreen, Ryan B.; Guzman, Michelle; Izyumskaya, Natalia; Ullah, Barkat; Hia, Supapon; Pitchford, Joshua; Timsina, Ranjita; Avrutin, Vitaliy; Ozgur, Umit; Morkoc, Hadis; Dhar, Nibir; Topsakal, Erdem
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Two charge states of the CN acceptor in GaN: Evidence from photoluminescence
err2018-09-28
err110
errOAAI
errReshchikov, M. A.; Vorobiov, M.; Demchenko, D. O.; Ozgur, U.; Morkoc, H.; Lesnik, A.; Hoffmann, M. P.; Hoerich, F.; Dadgar, A.; Strittmatter, A.
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InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors
err2018-04-01
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PREAI
errSheremet, V.; Gheshlaghi, N.; Sozen, M.; Elci, M.; Sheremet, N.; Aydinli, A.; Altuntas, I.; Ding, K.; Avrutin, V.; Ozgur, U.; Morkoc, H.
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Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors
err2018-01-01
err14
PREAI
errSheremet, V.; Genc, M.; Gheshlaghi, N.; Elci, M.; Sheremet, N.; Aydinli, A.; Altuntas, I.; Ding, K.; Avrutin, V.; Ozgur, U.; Morkoc, H.
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The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes
err2017-11-01
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PREAI
errSheremet, V.; Genc, M.; Elci, M.; Sheremet, N.; Aydinli, A.; Altuntas, I.; Ding, K.; Avrutin, V.; Ozgur, U.; Morkoc, H.
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Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence
err2016-11-30
err41
errOAAI
errReshchikov, M. A.; McNamara, J. D.; Toporkov, M.; Avrutin, V.; Morkoc, H.; Usikov, A.; Helava, H.; Makarov, Yu.
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Optical properties of the organic-inorganic hybrid perovskite CH3NH3PbI3: Theory and experiment
err2016-08-17
err51
PREAI
errDemchenko, D. O.; Izyumskaya, N.; Feneberg, M.; Avrutin, V.; Ozgur, U.; Goldhahn, R.; Morkoc, H.
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Zero-phonon line and fine structure of the yellow luminescence band in GaN
err2016-07-05
err58
errOAAI
errReshchikov, M. A.; McNamara, J. D.; Zhang, F.; Monavarian, M.; Usikov, A.; Helava, H.; Makarov, Yu.; Morkoc, H.
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Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers
err2015-05-06
err14
errOAAI
errZhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Ozgur, U.; Morkoc, H.
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Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques
err2015-02-01
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errOAAI
errZolnai, Z.; Toporkov, M.; Volk, J.; Demchenko, D. O.; Okur, S.; Szabo, Z.; Ozgur, U.; Morkoc, H.; Avrutin, V.; Kotai, E.
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Reactive molecular-beam epitaxy for Wurtzite GaN
err2013-11-29
err18
PREAI
errMohammad, SN; Kim, W; Salvador, A; Morkoc, H
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Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (1(1)over-bar01) GaN revealed from spatially resolved luminescence
err2013-11-21
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PREAI
errOkur, S.; Metzner, S.; Izyumskaya, N.; Zhang, F.; Avrutin, V.; Karbaum, C.; Bertram, F.; Christen, J.; Morkoc, H.; Ozgur, U.
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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
err2013-11-04
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PREAI
errKillat, N.; Montes Bajo, M.; Paskova, T.; Evans, K. R.; Leach, J.; Li, X.; Ozgur, U.; Morkoc, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.; Kuball, M.
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Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN
err2013-11-04
err16
errOAAI
errKhromov, S.; Monemar, B.; Avrutin, V.; Morkoc, H.; Hultman, L.; Pozina, G.
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The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes
err2013-08-02
err15
PREAI
errZhang, F.; Li, X.; Hafiz, S.; Okur, S.; Avrutin, V.; Ozgur, U.; Morkoc, H.
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