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SaveShare Save Share Save Share Save Optimization of CuOx/Ga2O3 Heterojunction Diodes for High-Voltage Power Electronics
Wang, Xiaohui; Li, Mujun; He, Minghao; Lu, Honghao; Chen, Chun-Zhang; Jiang, Yang; Wen, Kangyao; Du, Fangzhou; Zhang, Yi; Deng, Chenkai; Xiong, Zilong; Yu, Haozhe; Wang, Qing; Yu, Hongyu Share Save Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatmentDu, Fangzhou; Jiang, Yang; Wang, Peiran; Wen, Kangyao; Tang, Chuying; He, Jiaqi; Deng, Chenkai; Zhang, Yi; Li, Mujun; Wang, Xiaohui; Hu, Qiaoyu; Yu, Wenyue; Wang, Qing; Yu, Hongyu Share Save Harnessing of Cooperative Cu⋅⋅⋅H Interactions for Luminescent Low-Coordinate Copper(I) Complexes towards Stable OLEDsZhang, Qizheng; Li, Nengquan; Wan, Xintong; Song, Xiu-Fang; Zhang, Yi; Liu, He; Miao, Jingsheng; Zou, Yang; Yang, Chuluo; Li, Kai Share Save Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered TechniqueDeng, Chenkai; Tang, Chuying; Wang, Peiran; Cheng, Wei-Chih; Du, Fangzhou; Wen, Kangyao; Zhang, Yi; Jiang, Yang; Tao, Nick; Wang, Qing; Yu, Hongyu Share Save High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass techniqueLi, MuJun; He, MingHao; Wang, XiaoHui; Jiang, Yang; Wen, KangYao; Du, FangZhou; Deng, ChenKai; He, JiaQi; Zhang, Yi; Yu, WenYue; Wang, Qing; Yu, HongYu Share Save Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering TechniqueDeng, Chenkai; Wang, Peiran; Tang, Chuying; Hu, Qiaoyu; Du, Fangzhou; Jiang, Yang; Zhang, Yi; Li, Mujun; Xiong, Zilong; Wang, Xiaohui; Wen, Kangyao; Li, Wenmao; Tao, Nick; Wang, Qing; Yu, Hongyu Share Save Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performanceJiang, Yang; Du, FangZhou; Wen, KangYao; Zhang, Yi; Li, MuJun; Tang, ChuYing; Deng, ChenKai; Yu, WenYue; Wang, ZhongRui; Wang, Qing; Yu, HongYu Share Save Share Save Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN invertersJiang, Yang; Du, FangZhou; Wen, KangYao; He, JiaQi; Wang, PeiRan; Li, MuJun; Tang, ChuYing; Zhang, Yi; Wang, ZhongRui; Wang, Qing; Yu, HongYu Share Save MEMS Oscillators-Network-Based Ising Machine with Grouping MethodDeng, Yi; Zhang, Yi; Zhang, Xinyuan; Jiang, Yang; Chen, Xi; Yang, Yansong; Tong, Xin; Cai, Yao; Liu, Wenjuan; Sun, Chengliang; Shang, Dashan; Wang, Qing; Yu, Hongyu; Wang, Zhongrui Share Save Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivityTang, Chuying; Fu, Chun; Jiang, Yang; He, Minghao; Deng, Chenkai; Wen, Kangyao; He, Jiaqi; Wang, Peiran; Du, Fangzhou; Zhang, Yi; Hu, Qiaoyu; Tao, Nick; Wang, Qing; Yu, Hongyu Share Save A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responsesJiang, Yang; Li, Wenmao; Du, Fangzhou; Sokolovskij, Robert; Zhang, Yi; Shi, Shuhui; Huang, Weiguo; Wang, Qing; Yu, Hongyu; Wang, Zhongrui Share Save Oscillator-Network-Based Ising MachineZhang, Yi; Deng, Yi; Lin, Yinan; Jiang, Yang; Dong, Yujiao; Chen, Xi; Wang, Guangyi; Shang, Dashan; Wang, Qing; Yu, Hongyu; Wang, Zhongrui Share Save Share Save 
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