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SaveShare Save Share Save Gate Leakage suppression and breakdown improvement of InAlN/GaN MIS-HEMTs with N2O surface treatment
Jiang, Yang; Du, Fangzhou; Wang, Peiran; He, Jiaqi; Wen, Kangyao; Deng, Chenkai; Zhang, Yi; Li, Mujun; Wang, Xiaohui; Wang, Zhongrui; Wang, Qing; Yu, Hongyu Share Save Share Save Conformal self-powered high signal-to-noise ratio biomimetic in-situ aircraft surface turbulence mapping systemSheng, Hengrui; Cao, Leo N. Y.; Shang, Yurui; Li, Chengyu; Zhou, Zhuyu; Jiang, Yang; Sun, Yanshuo; Tang, Wei; Chen, Baodong; Guo, Wenxi; Xu, Zijie; Wang, Zhong Lin Share Save Optimization of CuOx/Ga2O3 Heterojunction Diodes for High-Voltage Power ElectronicsWang, Xiaohui; Li, Mujun; He, Minghao; Lu, Honghao; Chen, Chun-Zhang; Jiang, Yang; Wen, Kangyao; Du, Fangzhou; Zhang, Yi; Deng, Chenkai; Xiong, Zilong; Yu, Haozhe; Wang, Qing; Yu, Hongyu Share Save Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatmentDu, Fangzhou; Jiang, Yang; Wang, Peiran; Wen, Kangyao; Tang, Chuying; He, Jiaqi; Deng, Chenkai; Zhang, Yi; Li, Mujun; Wang, Xiaohui; Hu, Qiaoyu; Yu, Wenyue; Wang, Qing; Yu, Hongyu Share Save Share Save A Novel AlGaN/GaN SBD Thermal Sensor With Ultralow Power, Excellent Linearity, and High SensitivitySun, Yuhan; Wen, Kangyao; Du, Fangzhou; Deng, Chenkai; Li, Wenmao; He, Jiaqi; Hu, Qiaoyu; Jiang, Yang; Sokolovskij, Robert; Wang, Qing; Jiang, Yu-Long; Yu, Hong-Yu Share Save Share Save Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered TechniqueDeng, Chenkai; Tang, Chuying; Wang, Peiran; Cheng, Wei-Chih; Du, Fangzhou; Wen, Kangyao; Zhang, Yi; Jiang, Yang; Tao, Nick; Wang, Qing; Yu, Hongyu Share Save Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stabilityWen, Kangyao; He, Jiaqi; Jiang, Yang; Du, Fangzhou; Deng, Chenkai; Wang, Peiran; Tang, Chuying; Li, Wenmao; Hu, Qiaoyu; Sun, Yuhan; Wang, Qing; Jiang, Yulong; Yu, Hongyu Share Save High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass techniqueLi, MuJun; He, MingHao; Wang, XiaoHui; Jiang, Yang; Wen, KangYao; Du, FangZhou; Deng, ChenKai; He, JiaQi; Zhang, Yi; Yu, WenYue; Wang, Qing; Yu, HongYu Share Save Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering TechniqueDeng, Chenkai; Wang, Peiran; Tang, Chuying; Hu, Qiaoyu; Du, Fangzhou; Jiang, Yang; Zhang, Yi; Li, Mujun; Xiong, Zilong; Wang, Xiaohui; Wen, Kangyao; Li, Wenmao; Tao, Nick; Wang, Qing; Yu, Hongyu Share Save Share Save Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performanceJiang, Yang; Du, FangZhou; Wen, KangYao; Zhang, Yi; Li, MuJun; Tang, ChuYing; Deng, ChenKai; Yu, WenYue; Wang, ZhongRui; Wang, Qing; Yu, HongYu Share Save Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN invertersJiang, Yang; Du, FangZhou; Wen, KangYao; He, JiaQi; Wang, PeiRan; Li, MuJun; Tang, ChuYing; Zhang, Yi; Wang, ZhongRui; Wang, Qing; Yu, HongYu Share Save Share Save MEMS Oscillators-Network-Based Ising Machine with Grouping MethodDeng, Yi; Zhang, Yi; Zhang, Xinyuan; Jiang, Yang; Chen, Xi; Yang, Yansong; Tong, Xin; Cai, Yao; Liu, Wenjuan; Sun, Chengliang; Shang, Dashan; Wang, Qing; Yu, Hongyu; Wang, Zhongrui Share Save 
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