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Sriram Krishnamoorthy

university of california

56H-index
504Paper Count
1.0WCitation Count
Published Papers 90
Publication Date
High Responsivity Optically-Triggered Vertical GaN Heterojunction Power Switches With kHz Operation
err2026-01-05
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PREAI
errJung-Han Hsia; Zhongyunshen Zhu; Yizheng Liu; John Niroula; Minsik Oh; Joshua Andrew Perozek; Joseph Park; Sriram Krishnamoorthy; Tomás Palacios
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Kilovolt-class β-Ga2O3 field-plated Schottky barrier diodes with MOCVD-grown intentionally 1015 cm-3 doped drift layers
err2025-11-14
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PREAI
errPeterson, Carl; Saha, Chinmoy Nath; Kahler, Rachel; Liu, Yizheng; Mattapalli, Akhila; Roy, Saurav; Krishnamoorthy, Sriram
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Evidence for Ga clusters in β-Ga2O3 from Raman spectroscopy and density functional theory
err2025-10-07
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errOAAI
errHuso, Jesse; Dutton, Benjamin; Remple, Cassandra; McCluskey, Matthew D.; McCloy, John S.; Bhattacharyya, Arkka; Krishnamoorthy, Sriram; Rebollo, Steve; Speck, James S.; Varley, Joel B.; Voss, Lars F.
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Growth of nitrogen-doped (010) β-Ga2O3 by plasma-assisted molecular beam epitaxy using an O2/N2 gas mixture
err2025-02-25
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PREAI
errRebollo, Steve; Liu, Yizheng; Peterson, Carl; Krishnamoorthy, Sriram; Speck, James S.
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Dielectric reliability and interface trap characterization in MOCVD grown in situ Al2O3 on β-Ga2O3
err2025-01-03
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PREAI
errRoy, Saurav; Bhattacharyya, Arkka; Peterson, Carl; Krishnamoorthy, Sriram
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200 cm2/Vs electron mobility and controlled low 1015 cm-3 Si doping in (010) β-Ga2O3 epitaxial drift layers
err2024-10-30
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PREAI
errPeterson, Carl; Bhattacharyya, Arkka; Chanchaiworawit, Kittamet; Kahler, Rachel; Roy, Saurav; Liu, Yizheng; Rebollo, Steve; Kallistova, Anna; Mates, Thomas E.; Krishnamoorthy, Sriram
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Effective uniaxial dielectric function tensor and optical phonons in (201)-oriented β-Ga2O3 films with equally distributed sixfold-rotation domains
err2024-10-02
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PREAI
errMock, Alyssa; Richter, Steffen; Papamichail, Alexis; Stanishev, Vallery; Ghezellou, Misagh; Ul-Hassan, Jawad; Popp, Andreas; Bin Anooz, Saud; Gogova, Daniela; Ranga, Praneeth; Krishnamoorthy, Sriram; Korlacki, Rafal; Schubert, Mathias; Darakchieva, Vanya
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Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3
err2024-08-30
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errOAAI
errRock, Nathan D.; Yang, Haobo; Eisner, Brian; Levin, Aviva; Bhattacharyya, Arkka; Krishnamoorthy, Sriram; Ranga, Praneeth; Walker, Michael A.; Wang, Larry; Cheng, Ming Kit; Zhao, Wei; Scarpulla, Michael A.
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Heated-H3PO4 etching of (001) β-Ga2O3
err2024-07-01
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PREAI
errRebollo, Steve; Itoh, Takeki; Krishnamoorthy, Sriram; Speck, James S.
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Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates
err2024-02-22
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PREAI
errPeterson, Carl; Alema, Fikadu; Bhattacharyya, Arkka; Ling, Ziliang; Roy, Saurav; Osinsky, Andrei; Krishnamoorthy, Sriram
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Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF (vol 123, 243502, 2023)
err2024-01-08
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errOAAI
errRoy, Saurav; Kostroun, Benjamin; Cooke, Jacqueline; Liu, Yizheng; Bhattacharyya, Arkka; Peterson, Carl; Sensale-Rodriguez, Berardi; Krishnamoorthy, Sriram
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Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm-3) high-mobility (010) β-Ga2O3 drift layers
err2024-01-04
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PREAI
errBhattacharyya, Arkka; Peterson, Carl; Chanchaiworawit, Kittamet; Roy, Saurav; Liu, Yizheng; Rebollo, Steve; Krishnamoorthy, Sriram
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Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF
err2023-12-11
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errOAAI
errRoy, Saurav; Kostroun, Benjamin; Cooke, Jacqueline; Liu, Yizheng; Bhattacharyya, Arkka; Peterson, Carl; Sensale-Rodriguez, Berardi; Krishnamoorthy, Sriram
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Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage
err2023-11-06
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PREAI
errFarzana, Esmat; Roy, Saurav; Hendricks, Nolan S.; Krishnamoorthy, Sriram; Speck, James S.
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2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate
err2023-04-10
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errOAAI
errRoy, Saurav; Bhattacharyya, Arkka; Peterson, Carl; Krishnamoorthy, Sriram
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Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers
err2023-02-23
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errOAAI
errBhattacharyya, Arkka; Peterson, Carl; Itoh, Takeki; Roy, Saurav; Cooke, Jacqueline; Rebollo, Steve; Ranga, Praneeth; Sensale-Rodriguez, Berardi; Krishnamoorthy, Sriram
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Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs
err2023-01-26
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PREAI
errSong, Yiwen; Bhattacharyya, Arkka; Karim, Anwarul; Shoemaker, Daniel; Huang, Hsien-Lien; Roy, Saurav; McGray, Craig; Leach, Jacob H.; Hwang, Jinwoo; Krishnamoorthy, Sriram; Choi, Sukwon
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Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes
err2022-11-02
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errOAAI
errFarzana, Esmat; Bhattacharyya, Arkka; Hendricks, Nolan S.; Itoh, Takeki; Krishnamoorthy, Sriram; Speck, James S.
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Optimized Quantum Phase Estimation for Simulating Electronic States in Various Energy Regimes
err2022-10-06
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errOAAI
errKang, Christopher; Bauman, Nicholas P.; Krishnamoorthy, Sriram; Kowalski, Karol
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