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High Conductivity Update Linearity MoS2 Memtransistors Array Based on Lithium-Ion Modulation
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DOI：10.1002/admi.202201775.png)
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Abstract
En 中文
The typical nonlinear and asymmetric response of synaptic memristors based on 2D layered materials to positive and negative electrical pulses makes the implementation of accurate deep neural networks very challenging. Here, it has been constructed an integrated circuit (IC) process-compatible array of modulatable neuromorphic devices based on MoS2 three-terminal memristors and show that the switching characteristics of this memristor become more gradual and symmetric under electrical excitation, yielding up to 98% linearity of conductance updates in optimized simulations of biological synaptic behavior, achieving long-term plasticity of 150 s. The linear weight update has better predictability and distinguishability. And all-solid lithium cobaltate is introduced as an independent modulation channel to obtain a modulatable molybdenum disulfide bandgap by controlling the embedding and disembedding of lithium ions, which effectively reduces the contact potential barrier and more flexibly modulates the artificial synaptic properties based on multiple coupling of light, electricity, and ions. This work lays the foundation for the realization of high-density and energy-efficient neuromorphic computing chips.
Keywords:
memristors
2D materials
ionic gating
synaptic plasticity
warfe-levels
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