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Stefan De Gendt

interuniversity microelectronics centre

52H-index
1.0KPaper Count
1.3WCitation Count
Published Papers 196
Publication Date
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A High-Resolution EUV Zinc-Oximate Resist: Why Post-exposure Bake Fails to Improve Lithography Performance
errThe Journal of Physical Chemistry C
IF3.2
err2026-04-29
err0
PREAI
errYing-Lin Chen; Fabian Holzmeier; Roberto Fallica; Tan Manuel Marcello Nathanael; Fernando M. Fernandes; Benoit Hackens; Dhirendra P. Singh; Thierry Conard; Li-Ting Tseng; Thomas M. Gädda; Sarah Seefried; Zhongmei Han; Stefan De Gendt; Kevin Dorney; Danilo De Simone
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errSave
Atomic Layer Etching of Nickel Using N2/H2 Plasma Exposure and Hexafluoroacetylacetone
errACS Applied Electronic Materials
IF4.7
err2026-04-24
err0
PREAI
errAli Mohamed Ali; Guillaume Krieger; Jean-Philippe Soulié; Harm C. M. Knoops; Wilhelmus M. M. Kessels; Stefan De Gendt; Souvik Kundu; Jean-François de Marneffe
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Electronic effects of localized strain in graphene
errCarbon
IF11.6
err2026-02-04
err0
PREAI
errZviadi Zarkua; Robin Smeyers; Aleksandr Seliverstov; Renan Villarreal; Ahmed Samir Lotfy; Rikkie Joris; Muhammad Saad; Hung-Chieh Tsai; Stefan De Gendt; Steven Brems; Steven De Feyter; Felix Junge; Hans Hofsäss; Giovanni Di Santo; Luca Petaccia; Simona Achilli; E. Harriet Åhlgren; François M. Peeters; Milorad V. Milošević; Lucian Covaci
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Reducing the Environmental Impact of Wet Chemical Processes for Advanced Semiconductor Manufacturing
errSustainable Chemistry
IF4.2
err2026-02-02
err0
errOAAI
errGocyla, Mateusz; Boakes, Lizzie; Struyf, Herbert; Chokri, Rachid; Vandevenne, Tibo; Van Caneghem, Jo; Rolin, Cedric; De Gendt, Stefan
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Transient-Assisted Processing (TAP): A Path to Low-Emission Dry Etching in the Ångström-Node Era
errACS Sustainable Chemistry and Engineering
IF7.3
err2026-01-20
err0
PREAI
errAtefeh Fathzadeh; Philippe Bezard; Emily Gallagher; Giel Arnauts; Stefan De Gendt
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errSave
Fundamental understanding of exposure and process chemistry of Sn-based metal oxide resists: effects of ambient environment during post-exposure delay and bake
errJournal of Micro-Nanopatterning Materials and Metrology-JM3
IF1.8
err2026-01-01
err0
PREAI
errPollentier, Ivan; Holzmeier, Fabian; Fallica, Roberto; Chen, Ying-Lin; Singh, Dhirendra P.; Piatti, Lorenzo; Suh, Hyo Seon; De Simone, Danilo; De Gendt, Stefan; Van Der Heide, Paul; Petersen, John; Dorney, Kevin
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Hard Mask Strategies in Nanoscale Patterning of Mg-Based Oxide Semiconductors: Implications for Advanced Device Architectures
errACS APPLIED NANO MATERIALS
IF5.5
err2025-12-01
err0
PREAI
errGhorbani, Leila; Pavel, Alexandru; Dekkers, Hendrik F. W.; De Gendt, Stefan; Kundu, Shreya
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Photocatalytic TiO2 surface combined with lithography defined area-selective deposition of Ru: Selectivity and defect formation mechanisms
errSurfaces and Interfaces
IF6.3
err2025-11-29
err0
PREAI
errJayant K. Lodha; Stefan De Gendt; Silvia Armini
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errSave
Patterning of Mg-Based Oxide Semiconductors (MgZnO) at Sub-100 nm Pitches: Reactive Ion Etching versus Atomic Layer Etching
errACS Applied Materials & Interfaces
IF8.2
err2025-10-29
err0
PREAI
errLeila Ghorbani; Souvik Kundu; Alexandru Pavel; Shankha Mukherjee; Anastasiia Kruv; Stefan De Gendt; Shreya Kundu
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errSave
A dry-wet quasi-ALE approach for transition metals: tungsten as a model system
errApplied Surface Science
IF6.9
err2025-10-24
err0
errOAAI
errCinzia Chan; Jean-François de Marneffe; Christopher Gort; Jill Serron; Marta Agati; Felix Seidel; Jan P. Hofmann; Stefan De Gendt; Dennis H. van Dorp
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errSave
Phase and orientation evolution of Bismuth during heteroepitaxy on ML-MoS2/Sapphire (0001) surfaces
errJournal of Materials Science
IF3.9
err2025-09-05
err0
PREAI
errGaohang He; Aryan Afzalian; Olivier Richard; Stefanie Sergeant; Thomas Nuytten; Surajit Sutar; Kaustuv Banerjee; César Javier Lockhart de la Rosa; Gouri Sankar Kar; Stefan De Gendt; Clement Merckling
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errSave
Structural transformation for BaBiO3-δ thin films grown on SrTiO3-buffered Si(001) induced by an in-situ molecular beam epitaxy cooldown process
errCommunications Materials
IF9.6
err2025-08-20
err0
errOAAI
errIslam Ahmed; Olivier Richard; Partrick Carolan; Marco Gambin; Luca Ceccon; Moloud Kaviani; Stefan De Gendt; Clement Merckling
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errSave
Study on Next-Generation EUV Lithography Technology: Hyper NA; the Highest Potential for Practical Implementation
errACS Applied Materials & Interfaces
IF8.2
err2025-08-11
err0
PREAI
errInhwan Lee; Joern-Holger Franke; Vicky Philipsen; Kurt Ronse; Stefan De Gendt; Eric Hendrickx
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errSave
Transfer of Substitutionally Implanted Graphene
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-03-24
err0
PREAI
errZarkua, Z; Lotfy, AS; Maesen, Z; Seliverstov, A; He, C; Joris, R; Saad, M; van Stiphout, K; Tsai, HC; Junge, F; Hofsaess, HC; Lacovig, P; Lizzit, S; Di Santo, G; Petaccia, L; Choueikani, F; Ohresser, P; De Feyter, S; De Gendt, S; Brems, S; van de Vondel, J; Villarreal, R; Pereira, LMC
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Isolating the Role of Photoionization for Copolymer Present in Extreme Ultraviolet Photoresists by Gas Phase Electron-Ion Coincidence Experiments
erracs applied engineering materials
IF4.7
err2025-01-14
err0
PREAI
errSajjadian, FS; Laffert, V; Singh, DP; Galleni, L; Pollentier, I; Richter, R; van Setten, MJ; De Gendt, S; Conard, T; Holzmeier, F
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errSave
Area-Selective Atomic Layer Deposition of Ru Using Carbonyl-Based Precursor and Oxygen Co-Reactant: Understanding Defect Formation Mechanisms
errNANOMATERIALS
IF4.3
err2024-07-16
err0
errOAAI
errLodha, Jayant Kumar; Meersschaut, Johan; Pasquali, Mattia; Billington, Hans; Gendt, Stefan De; Armini, Silvia
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Achieving High Substitutional Incorporation in Mn-Doped Graphene
errACS NANO
IF16
err2024-06-28
err1
PREAI
errVillarreal, Renan; Zarkua, Zviadi; Kretschmer, Silvan; Hendriks, Vince; Hillen, Jonas; Tsai, Hung Chieh; Junge, Felix; Nissen, Matz; Saha, Tanusree; Achilli, Simona; Hofsa''ss, Hans C.; Martins, Michael; De Ninno, Giovanni; Lacovig, Paolo; Lizzit, Silvano; Di Santo, Giovanni; Petaccia, Luca; De Feyter, Steven; De Gendt, Stefan; Brems, Steven; van de Vondel, Joris; Krasheninnikov, Arkady V.; Pereira, Lino M. C.
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Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer
errNPJ 2D MATERIALS AND APPLICATIONS
IF8.8
err2024-03-27
err3
errOAAI
errWyndaele, P. -J.; De Marneffe, J. -F.; Sergeant, S.; De La Rosa, C. J. L.; Brems, S.; Caro, A. M.; De Gendt, S.
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errSave
Influence of thickness scaling on the electronic structure and optical properties of oxygen deficient BaBiO3-δ thin films grown on SrTiO3-buffered Si(001) substrate
errAPL MATERIALS
IF4.5
err2024-03-05
err0
errOAAI
errAhmed, I.; Korytov, M.; Sergeant, S.; Nuytten, T.; Conard, T.; De Gendt, S.; Merckling, C.
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errSave
Extreme Ultraviolet Lithographic Performance and Reaction Mechanism of Polymeric Resist-Utilizing Radical- and Acid-Amplified Cross-Linking
errCHEMISTRY OF MATERIALS
IF7
err2024-02-01
err7
PREAI
errNaqvi, Bilal A.; Enomoto, Satoshi; Machida, Kohei; Takata, Yui; Kozawa, Takahiro; Muroya, Yusa; De Gendt, Stefan; De Simone, Danilo
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Research Directions

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Co-authors
Cooperation Journals
J
Jing Kong
H-index: 139 · Papers: 862
D
David Beljonne
H-index: 109 · Papers: 837
B
Bert F. Sels
H-index: 101 · Papers: 677
K
Kazuhiko Yamamoto
H-index: 98 · Papers: 1.2K
T
Tomás Palacios
H-index: 87 · Papers: 494
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