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SaveEmerging GaN Technologies for Next-Generation Millimeter-Wave Applications
Medjdoub, Farid; Shinohara, Keisuke; Thome, Fabian; Moon, Jeong-sun; Chumbes, Eduardo; Guidry, Matthew T.; Mishra, Umesh; Zanoni, Enrico; Meneghini, Matteo; Meneghesso, Gaudenzio; Pomeroy, James W.; Thingujam, Terirama; Kuball, Martin Share Save Share Save Share Save Assessment of large critical electric field in ultra-wide bandgap p-type spinel ZnGa2O4Chi, Zeyu; Tchelidze, Tamar; Sartel, Corinne; Gamsakhurdashvili, Tsotne; Madaci, Ismail; Yamano, Hayate; Sallet, Vincent; Dumont, Yves; Perez-Tomas, Amador; Medjdoub, Farid; Chikoidze, Ekaterine Share Save Share Save Share Save Share Save Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3Chikoidze, E.; Tchelidze, T.; Sartel, C.; Chi, Z.; Kabouche, R.; Madaci, I; Rubio, C.; Mohamed, H.; Sallet, V; Medjdoub, F.; Perez-Tomas, A.; Dumont, Y. Share Save Share Save High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage ApplicationsTajalli, Alaleh; Meneghini, Matteo; Besendoerfer, Sven; Kabouche, Riad; Abid, Idriss; Puesche, Roland; Derluyn, Joff; Degroote, Stefan; Germain, Marianne; Meissner, Elke; Zanoni, Enrico; Medjdoub, Farid; Meneghesso, Gaudenzio Share Save Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition ExperimentTajalli, Alaleh; Borga, Matteo; Meneghini, Matteo; De Santi, Carlo; Benazzi, Davide; Besendoerfer, Sven; Pusche, Roland; Derluyn, Joff; Degroote, Stefan; Germain, Marianne; Kabouche, Riad; Abid, Idriss; Meissner, Elke; Zanoni, Enrico; Medjdoub, Farid; Meneghesso, Gaudenzio Share Save Share Save Share Save GaN-Based Laser Wireless Power Transfer SystemDe Santi, Carlo; Meneghini, Matteo; Caria, Alessandro; Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid; Kalinic, Boris; Cesca, Tiziana; Meneghesso, Gaudenzio; Zanoni, Enrico Share Save Share Save 
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