Not logged inGaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structure
Yang, Zhichao; Liao, Eason; Ding, Daniel; Zhuang, Jungang; Dong, Hao; Yang, Han; Zhu, Lei; Zhang, Bingliang; Yu, Guohao; Zeng, Zhongming; Zhang, Baoshun
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SaveEnhancing hydrogen evolution by heterointerface engineering of Ni/ MoN catalysts
Jiang, Junzheng; Qiu, Yunfan; Dong, Hao; Yang, Lei; Miao, Yaping; Xiong, Liwei; Gao, Biao; Zhang, Xuming; Chu, Paul K.; Peng, Xiang
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