GaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structure

doi:10.35848/1882-0786/ae1805

GaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structure

2025-11-01

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DOI：10.35848/1882-0786/ae1805

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GaN power high electron mobility transistors (HEMTs) with a breakdown voltage (BV) exceeding 2500 V at IDSS leakage of 1 mu A mm-1 grown by plasma-assisted MBE (PA-MBE) on sapphire was demonstrated with a single field plate structure. Subdividing the 70 nm GaN channel into 12 layers has been shown to exhibit fewer defect states and reduced pore defects, thereby benefiting the BV. The single gate field plate technique helps to simplify the peak electric field condition and also contributes to the high BV. These advantages underscore the potential of the PA-MBE-grown GaN power HEMT for high-power electronic applications.

Keywords:

GaN power HEMT

MBE

field plate

breakdown voltage

current collapse

GaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structure

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