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C

Changhwan Choi

hanyang university

40H-index
188Paper Count
6.1KCitation Count
Published Papers 78
Publication Date
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Plasma dry desmear of Ajinomoto build-up film for fine micro-via fabrication in advanced semiconductor packaging
errMaterials Science in Semiconductor Processing
IF4.6
err2026-06-22
err0
PREAI
errGyulee Kim; Sunbum Kim; Kyoung Yeon Min; Young Ju Han; Soonoh Jeong; Mooseong Kim; Changhwan Choi
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Material and Electrical Characteristics of a Thin-Film Transistor Using Cationic Composition-Controlled Atomic Layer-Deposited In–Ga–Sn–O (IGTO) Thin Film
errACS Applied Electronic Materials
IF4.7
err2026-01-27
err0
PREAI
errChanseul Lee; Sunbum Kim; Kyoung Yeon Min; Gyulee Kim; Minhyuk Kim; Yongjoo Park; Changhwan Choi
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Effect of Hydrogen Profile in Flash Memory SiNx Charge Trap Layer with Different Silicon to Nitrogen Ratios
errAdvanced Electronic Materials
IF5.3
err2025-07-21
err0
errOAAI
errSehyeon Choi; Yunseo Lim; Sejin Kim; San Park; Boncheol Ku; Hyungjun Kim; Jaehyun Yang; Bio Kim; Youngseon Son; Hanmei Choi; Changhwan Choi
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Hydrophilic/Hydrophobic functionalization of HFBI-Graphene composite using intensity and direction of external electric field: In silico study
errPROGRESS IN ORGANIC COATINGS
IF7.3
err2025-07-01
err0
PREAI
errPark, Wooboum; Yoon, Taeyoung; Choi, Changhwan; You, Juneseok; Na, Sungsoo
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The effects of inserted layers (HfO2, ZrO2, Y2O3, La2O3) on the ferroelectric and synaptic properties of Zr-doped HfO2 sandwich structure
errApplied Surface Science
IF6.9
err2025-06-28
err0
PREAI
errChulwon Chung; Kyungsoo Park; Seunghyeon Yun; Junhyeok Park; Hyeon Cheol Jeong; Changhwan Choi
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Zirconium-doped hafnia (HfZrOx) ferroelectric capacitor with atomic layer deposited HfO2, ZrO2, and La2O3 interfacial layers
errCeramics International
IF5.6
err2025-04-16
err0
PREAI
errChulwon Chung; Jiyeon Lim; Boncheol Ku; Kyungsoo Park; Changhwan Choi
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Enhanced electrical stability and reliability of amorphous IGZO/HfO2 thin film transistors with CF4 plasma treatment
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-04-01
err0
PREAI
errKim, Gyulee; Kim, Sunbum; Kim, Minhyuk; Choi, Changhwan
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Heterogeneous monolithic 3D integration for hybrid vertical CMOS inverter using n-type IGTO TFT on p-type Si FET
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-01-01
err2
PREAI
errLee, Chanseul; Kim, Sunbum; Kim, Gyulee; Choi, Changhwan
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Polyurethane packed graphene-coated spider silk by dip-casting for a highly stretchable strain sensor
errJOURNAL OF MATERIALS CHEMISTRY B
IF5.7
err2025-01-01
err0
PREAI
errAbbas, Zaigham; Hassan, Gul; Khan, Muhammad Umair; Abbas, Haider; Ahmad, Basheer; Shuja, Ahmed; Sajid, Memoon; Bae, Jinho; Choi, Changhwan
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Hf0.5Zr0.5O2/HfO2/Hf0.5Zr0.5O2 laminated thin films and CF4 plasma passivation for improved memory and synaptic characteristics of ferroelectric field-effect transistors
errNANOSCALE
IF5.1
err2025-01-01
err0
errOAAI
errPark, Kyungsoo; Chung, Chulwon; Ku, Boncheol; Yun, Seunghyeon; Park, Junhyeok; Choi, Changhwan
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The effect of shale gas booms on environmental CSR activity
errINTERNATIONAL REVIEW OF FINANCIAL ANALYSIS
IF9.8
err2024-10-01
err2
PREAI
errChoi, Changhwan; Chung, Chune Young
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Improvement of synaptic property of GeSe based CBRAM by engineering the deposition condition of switching matrix
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-08-01
err1
PREAI
errChung, Chulwon; Choi, Changhwan
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Area-selective atomic layer deposition (AS-ALD) of low temperature (300 °C) cobalt thin film using octadecyltrichlorosilane (ODTS) self-assembled monolayers (SAMs)
errAPPLIED SURFACE SCIENCE
IF6.9
err2024-08-01
err4
PREAI
errKim, Chaewon; Choi, Moonsuk; Sim, Jihyun; Kim, Hyungjun; Choi, Changhwan
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The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non-Volatile Devices
errADVANCED SCIENCE
IF14.1
err2024-06-17
err2
errOAAI
errJeon, Yu-Rim; Seo, Donguk; Lee, Yoonmyung; Akinwande, Deji; Choi, Changhwan
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Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-06-01
err1
PREAI
errChoi, Moonsuk; Sim, Jihyeon; Kim, Hyeongjun; Lim, Hyun Jin; Kim, Ki Sub; Choi, Changhwan
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Synaptic Characteristics of Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors and Synapse-Neuron Arrayed Neuromorphic Hardware System
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2024-02-22
err3
errOAAI
errJeon, Yu-Rim; Kim, Jeong-Hoon; Akinwande, Deji; Choi, Changhwan
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Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defects
errNANOSCALE HORIZONS
IF6.6
err2024-01-01
err5
PREAI
errJeon, Yu-Rim; Akinwande, Deji; Choi, Changhwan
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Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO2 (La:HfO2) and TaN-Based Artificial Synapses
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2023-12-02
err6
PREAI
errJeon, Yu-Rim; Kim, Duho; Ku, Boncheol; Chung, Chulwon; Choi, Changhwan
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Room-temperature stable CsPbI3 perovskite quantum dots prepared by layer-by-layer assembly for photonic synapse
errJOURNAL OF ALLOYS AND COMPOUNDS
IF6.3
err2023-10-01
err8
PREAI
errKu, Boncheol; Koo, Bonkee; Kim, Wooyeon; Kim, Younghoon; Jeon, Yu-Rim; Ko, Min Jae; Choi, Changhwan
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Photo-synaptic properties of CH3NH3Pb1-xMnxBr2x+1 hybrid perovskite thin film-based artificial synapse
errCERAMICS INTERNATIONAL
IF5.6
err2023-04-01
err11
PREAI
errJeon, Yu-Rim; Lee, Dohee; Cho, Han Bin; Ku, Boncheol; Bin Im, Won; Choi, Changhwan
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Research Directions

No research directions
Co-authors
Cooperation Journals
H
H.‐S. Philip Wong
H-index: 106 · Papers: 779
C
Chong Seung Yoon
H-index: 92 · Papers: 468
D
Deji Akinwande
H-index: 75 · Papers: 490
H
Hyoun Woo Kim
H-index: 70 · Papers: 560
J
Jin‐Seong Park
H-index: 63 · Papers: 550
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