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SaveInfluence of post fabrication annealing on device performance of InAlN/ GaN high electron mobility transistors
Luo, Xin; Cui, Peng; Linewih, Handoko; Cheong, Kuan Yew; Xu, Mingsheng; Chen, Siheng; Wang, Liu; Sun, Jiuji; Dai, Jiacheng; Xu, Xiangang; Han, Jisheng
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SaveGrowth of 2-inch diamond films on 4H-SiC substrate by microwave plasma CVD for enhanced thermal performance
Hu, Xiufei; Li, Ming; Wang, Yingnan; Peng, Yan; Tang, Gongbin; Wang, Xiwei; Li, Bin; Yang, Yiqiu; Xu, Mingsheng; Xu, Xiangang; Han, Jisheng; Cheong, Kuan Yew
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SaveNucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition
Hu, Xiufei; Peng, Yan; Wang, Xiwei; Han, Xiaotong; Li, Bin; Yang, Yiqiu; Xu, Mingsheng; Xu, Xiangang; Han, Jisheng; Wang, Dufu; Cheong, Kuan Yew
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