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SaveShare Save Share Save Evaluation of tadalafil in combination with Low-Intensity Pulsed Ultrasound (LIPUS) for erectile dysfunction: a protocol for a randomized controlled trial (SPIRIT Compliant)
Zhang, Qi; Lv, Bodong; Yu, Haojie; Fu, Yuli; Xu, Runnan; Liao, Zedong; Zhang, Xin; Fu, Yijia; Huang, Wenjie; Huang, Xiaojun Share Save Share Save Share Save Share Save Share Save Share Save Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatmentDu, Fangzhou; Jiang, Yang; Wang, Peiran; Wen, Kangyao; Tang, Chuying; He, Jiaqi; Deng, Chenkai; Zhang, Yi; Li, Mujun; Wang, Xiaohui; Hu, Qiaoyu; Yu, Wenyue; Wang, Qing; Yu, Hongyu Share Save Share Save Flexible transparent layered metal oxides for organic devicesZhang, Tao; Li, Peicheng; Chen, Nan; Su, Jiale; Yang, Zhenxin; Wang, Dengke; Jiang, Nan; Shi, Changsheng; Zhu, Qiang; Yu, Hongyu; Lu, Zheng-Hong Share Save Share Save Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stabilityWen, Kangyao; He, Jiaqi; Jiang, Yang; Du, Fangzhou; Deng, Chenkai; Wang, Peiran; Tang, Chuying; Li, Wenmao; Hu, Qiaoyu; Sun, Yuhan; Wang, Qing; Jiang, Yulong; Yu, Hongyu Share Save High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass techniqueLi, MuJun; He, MingHao; Wang, XiaoHui; Jiang, Yang; Wen, KangYao; Du, FangZhou; Deng, ChenKai; He, JiaQi; Zhang, Yi; Yu, WenYue; Wang, Qing; Yu, HongYu Share Save Share Save Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performanceJiang, Yang; Du, FangZhou; Wen, KangYao; Zhang, Yi; Li, MuJun; Tang, ChuYing; Deng, ChenKai; Yu, WenYue; Wang, ZhongRui; Wang, Qing; Yu, HongYu Share Save Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN invertersJiang, Yang; Du, FangZhou; Wen, KangYao; He, JiaQi; Wang, PeiRan; Li, MuJun; Tang, ChuYing; Zhang, Yi; Wang, ZhongRui; Wang, Qing; Yu, HongYu Share Save Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trenchHe, JiaQi; Wang, PeiRan; Du, FangZhou; Wen, KangYao; Jiang, Yang; Tang, ChuYing; Deng, ChenKai; Li, MuJun; Hu, QiaoYu; Tao, Nick; Xiang, Peng; Cheng, Kai; Wang, Qing; Li, Gang; Yu, HongYu Share Save Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performanceHe, Jiaqi; Wen, Kangyao; Wang, Peiran; He, Minghao; Du, Fangzhou; Jiang, Yang; Tang, Chuying; Tao, Nick; Wang, Qing; Li, Gang; Yu, Hongyu Share Save 
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